Pressure and doping effects on the structural stability of thermoelectric BaAg2Te2

Author(s):  
Hulei Yu ◽  
Wen Li ◽  
Yanzhong Pei ◽  
Yue Chen

Abstract Ternary chalcogenides have attracted great attention for their potential applications in thermoelectric devices. Here, we investigate the pressure and doping effects on the structural stability of BaAg2Te2 using first-principles calculations. Imaginary frequencies are observed in the calculated phonon dispersions of the reported Pnma structure, indicating that Pnma BaAg2Te2 is lattice dynamically unstable at 0 K. Although the imaginary phonon frequencies are small, we find that hydrostatic pressure cannot effectively stabilize the structure. Based on the soft mode at Γ point, a new monoclinic phase with a space group of P21/c is proposed. From ab-initio molecular dynamics simulations, the P21/c phase is predicted to transform to the Pnma phase at a low temperature below 100 K. Electron/hole doping effects on the lattice dynamical stability of the Pnma phase are also studied. It is found that hole doping is superior to electron doping in stabilizing the Pnma phase. Further study on the electrical transport properties of the Pnma phase reveals a higher performance along b axis than that along the other two directions. This work paves an avenue to better understand the structural stability and electrical transport properties of thermoelectric BaAg2Te2.

2018 ◽  
Vol 122 (2) ◽  
pp. 28003 ◽  
Author(s):  
Shwetha G. Bhat ◽  
N. Gauquelin ◽  
Nirmal K. Sebastian ◽  
Anomitra Sil ◽  
A. Béché ◽  
...  

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


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