Deposition amount effects on the microstructure of ion-beam-sputtering grown Mn0.03Ge0.97 quantum dots for spintronic applications

2020 ◽  
Author(s):  
Yahui Li ◽  
Chen Li ◽  
Haochen Tong ◽  
Tao Chen ◽  
Guangyang Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Deposition Amount ◽  
Beam Sputtering

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Si Quantum Dot ◽  
Spacer Layer ◽  
Beam Sputtering ◽  
Factor Interactions ◽  
Si Quantum Dots

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

scholarly journals Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition

2012 ◽  
Vol 61 (1) ◽  
pp. 016804
Author(s):  
Yang Jie ◽  
Wang Chong ◽  
Jin Ying-Xia ◽  
Li Liang ◽  
Tao Dong-ping ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
The Self ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Ge Quantum Dots ◽  
Self Assembled

scholarly journals Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering

2011 ◽  
Vol 60 (9) ◽  
pp. 096101
Author(s):  
Zhang Xue-Gui ◽  
Wang Chong ◽  
Lu Zhi-Quan ◽  
Yang Jie ◽  
Li Liang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Si Quantum Dots

scholarly journals Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

2017 ◽  
Vol 8 ◽  
pp. 12-20 ◽  
Author(s):  
Sergei N Chebotarev ◽  
Alexander S Pashchenko ◽  
Leonid S Lunin ◽  
Elena N Zhivotova ◽  
Georgy A Erimeev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
Growth Direction ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Spacer Layer ◽  
Gaas Barrier ◽  
Beam Sputtering ◽  
Impurity Doping

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.

scholarly journals Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
S. N. Chebotarev ◽  
A. S. Pashchenko ◽  
V. A. Irkha ◽  
M. L. Lunina
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
High Dispersion ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Very High ◽  
A Current

A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAshut-quantum dots. According to atomic force and electron microscopy, photoluminescence, and capacity-voltage measurements it was found that an increase of ion-beam current from 60 to 120 μA at a temperature of 500°C and energy of 150 eV slightly enlarges the average sizes of quantum dots from 15 nm to 18 nm while their dispersion is about 30%. At a current of 180 μA a surface density is1.3·1011 cm−2, but under these conditions there is a very high dispersion of quantum dots up to 50%.

scholarly journals Quantum Dots: An Emerging Approach for Cancer Therapy

2022 ◽  
Vol 8 ◽  
Author(s):  
Sheetal Devi ◽  
Manish Kumar ◽  
Abhishek Tiwari ◽  
Varsha Tiwari ◽  
Deepak Kaushik ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Atomic Layer ◽  
Present Review ◽  
Layer By Layer ◽  
Ion Beam Sputtering ◽  
Photodynamic Treatment ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Fundamental Insight

Nanotechnology is indisputably a scientific technique that offers the prospect of new therapies, and hope, for the treatment of malignant illnesses. It is a novel technology that offers new approaches for the diagnosis and management of diverse diseases. Although the discovery of Quantum dots (QD) nano-transporters has already led to a few positive developments, QD nano-transporters are still at their initial stage, though have yet proven valuable to society. The excertion of QD indicates conversion in natural imaging along with photograph have established incredible suitability in bio-imaging, new drug development, targeted gene deliverance, biosensing, photodynamic treatment as well as diagnosis. The present review aimed to confer the significance of QD in diagnosis as well as in management of cancer. This review aims to impart fundamental insight as well as conception of QD its merits, properties, utilization as well as mode of action. This review highlight of different designing schemes of QD like hydrothermal, drop-casting, ultrasonic, solvothermal, spin-coating, atomic layer desorption, layer by layer, polymethylmethacrylate aided-transfer, electrochemical, ion beam sputtering deposition. Moreover, we have elaborated on the diverse researches related to cytotoxic examination to reveal that QDs are harmless. Concisely, the present review summarizes the fabrication schemes, current research and utilization of QD in cancer treatment.

Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

2016 ◽  
Vol 27 (30) ◽  
pp. 305601 ◽  
Author(s):  
Z Zhang ◽  
R F Wang ◽  
J Zhang ◽  
H S Li ◽  
J Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Direct Growth ◽  
Ge Quantum Dots

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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