A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing

2021 ◽  
Author(s):  
Wei Li ◽  
Qingrui Jia ◽  
Yumei Pan ◽  
Xi’an Chen ◽  
Yue Yin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Subthreshold Swing ◽  
Negative Capacitance ◽  
Effect Transistor ◽  
Gate Tunneling

scholarly journals ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Siqing Zhang ◽  
Huan Liu ◽  
Jiuren Zhou ◽  
Yan Liu ◽  
Genquan Han ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Differential Resistance ◽  
Control Device ◽  
Subthreshold Swing ◽  
Negative Capacitance ◽  
Effect Transistor ◽  
Clockwise Hysteresis

AbstractHere we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

scholarly journals ZrO2 Negtive Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

2020 ◽  
Author(s):  
Siqing Zhang ◽  
Huan Liu ◽  
Jiuren Zhou ◽  
Yan Liu ◽  
Genquan Han ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Negative Differential Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Differential Resistance ◽  
Control Device ◽  
Subthreshold Swing ◽  
Negative Capacitance ◽  
Effect Transistor ◽  
Clockwise Hysteresis

Abstract Here we report the ZrO2 - based Negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ±1 V V GS range, which can achieve new opportunities in furture voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO2/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrO2 films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of I DS and sub-60 subthreshold swing. 5 nm ZrO2 - based NCFETs achieve a clockwise hysteresis of of 0.24 V, lower than 60 mV/decade SS and an 12% I DS enhancement compared to the control device without ZrO2 . The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrO2 NCFET is related to the partical swiching of oxygen vacancy dipoles in the forward sweeping due to negative interfical dipoles at the Al2O3 /HfO2 interface.

Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

2021 ◽  
Vol 118 (19) ◽  
pp. 192904
Author(s):  
Carlotta Gastaldi ◽  
Matteo Cavalieri ◽  
Ali Saeidi ◽  
Eamon O'Connor ◽  
Sadegh Kamaei ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Capacitance ◽  
Si Doped ◽  
Effect Transistor
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