Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment steps

Abstract The ability to create metallic patterned nanostructures with excellent control of size, shape and spatial orientation is of utmost importance in the construction of next-generation electronic and optical devices as well as in other applications such as (bio)sensors, reactive surfaces for catalysis, etc. Moreover, development of simple, rapid and low-cost fabrication processes of metallic patterned nanostructures is a challenging issue for the incorporation of such devices in real market applications. In this contribution, a direct-write method that results in highly conducting palladium-based nanopatterned structures without the need of applying subsequent curing processes is presented. Spin-coated films of palladium acetate were irradiated with an electron beam to produce palladium nanodeposits (PdNDs) with controlled size, shape and height. The use of different electron doses was investigated and its influence on the PdNDs features determined, namely: (1) thickness of the deposits, (2) atomic percentage of palladium content, (3) oxidation state of palladium in the deposit, (4) morphology of the sample and grain size of the Pd nanocrystals and (5) resistivity. It has been probed that the use of high electron doses, 30000 μC·cm-2 results in the lowest resistivity reported to date for PdNDs, namely 145.1 μΩ·cm, which is only one order of magnitude higher than metallic palladium. This result paves the way for development of simplified lithography processes of nanostructured deposits avoiding subsequent post-treatment steps.

Download Full-text

Formation of complex features using electron-beam direct-write decomposition of palladium acetate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586026 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2685 ◽

Cited By ~ 15

Author(s):

T. J. Stark

Keyword(s):

Electron Beam ◽

Palladium Acetate ◽

Direct Write ◽

Complex Features

Download Full-text

A controller for safe, convenient operation of LaB6 emitters on electron-beam instruments

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075798 ◽

1983 ◽

Vol 41 ◽

pp. 408-409

Author(s):

W. J. Abramson ◽

H. W. Estry ◽

L. F. Allard

Keyword(s):

Electron Beam ◽

Control System ◽

Thermal Shock ◽

Appropriate Care ◽

Electron Guns ◽

Tungsten Filaments ◽

Order Of Magnitude ◽

Main Components

LaB6 emitters are becoming increasingly popular as direct replacements for tungsten filaments in the electron guns of modern electron-beam instruments. These emitters offer order of magnitude increases in beam brightness, and, with appropriate care in operation, a corresponding increase in source lifetime. They are, however, an order of magnitude more expensive, and may be easily damaged (by improper vacuum conditions and thermal shock) during saturation/desaturation operations. These operations typically require several minutes of an operator's attention, which becomes tedious and subject to error, particularly since the emitter must be cooled during sample exchanges to minimize damage from random vacuum excursions. We have designed a control system for LaBg emitters which relieves the operator of the necessity for manually controlling the emitter power, minimizes the danger of accidental improper operation, and makes the use of these emitters routine on multi-user instruments.Figure 1 is a block schematic of the main components of the control system, and Figure 2 shows the control box.

Download Full-text

ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1988460 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-291-C4-294

Author(s):

K. BARLOW

Keyword(s):

Electron Beam ◽

Direct Write

Download Full-text

Review of Development and Performance Evaluation of Active-matrix Nanocrystalline Si Electron Emitter Array for Massively Parallel Electron Beam Direct-write Lithography

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.135.221 ◽

2015 ◽

Vol 135 (6) ◽

pp. 221-229

Author(s):

Naokatsu Ikegami ◽

Akira Kojima ◽

Hiroshi Miyaguchi ◽

Takashi Yoshida ◽

Shinya Yoshida ◽

...

Keyword(s):

Electron Beam ◽

Performance Evaluation ◽

Massively Parallel ◽

Direct Write ◽

Active Matrix ◽

Electron Emitter ◽

Emitter Array ◽

And Performance ◽

Nanocrystalline Si

Download Full-text

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0228 ◽

2013 ◽

Author(s):

Wei-Chih Wang ◽

Jian-Shing Luo

Keyword(s):

Electron Beam ◽

Electron Beam Irradiation ◽

Forward Bias ◽

Irradiation Damage ◽

Beam Irradiation ◽

Excess Current ◽

Atomic Force ◽

Order Of Magnitude ◽

Voltage Contrast ◽

Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

Download Full-text

Expanding 3D Nanoprinting Performance by Blurring the Electron Beam

Micromachines ◽

10.3390/mi12020115 ◽

2021 ◽

Vol 12 (2) ◽

pp. 115

Author(s):

Lukas Seewald ◽

Robert Winkler ◽

Gerald Kothleitner ◽

Harald Plank

Keyword(s):

Electron Beam ◽

Direct Write ◽

Design Flexibility ◽

Individual Branch ◽

Inclination Angles ◽

3D Architecture ◽

20 Nm ◽

Surface Morphologies ◽

Nm Range ◽

Mechanical Rigidity

Additive, direct-write manufacturing via a focused electron beam has evolved into a reliable 3D nanoprinting technology in recent years. Aside from low demands on substrate materials and surface morphologies, this technology allows the fabrication of freestanding, 3D architectures with feature sizes down to the sub-20 nm range. While indispensably needed for some concepts (e.g., 3D nano-plasmonics), the final applications can also be limited due to low mechanical rigidity, and thermal- or electric conductivities. To optimize these properties, without changing the overall 3D architecture, a controlled method for tuning individual branch diameters is desirable. Following this motivation, here, we introduce on-purpose beam blurring for controlled upward scaling and study the behavior at different inclination angles. The study reveals a massive boost in growth efficiencies up to a factor of five and the strong delay of unwanted proximal growth. In doing so, this work expands the design flexibility of this technology.

Download Full-text

CrossGR

Proceedings of the ACM on Interactive Mobile Wearable and Ubiquitous Technologies ◽

10.1145/3448100 ◽

2021 ◽

Vol 5 (1) ◽

pp. 1-23

Author(s):

Xinyi Li ◽

Liqiong Chang ◽

Fangfang Song ◽

Ju Wang ◽

Xiaojiang Chen ◽

...

Keyword(s):

Gesture Recognition ◽

Low Cost ◽

User Involvement ◽

Recognition System ◽

Training Data ◽

Generative Adversarial Network ◽

Adversarial Network ◽

Target User ◽

Order Of Magnitude ◽

Training Examples

This paper focuses on a fundamental question in Wi-Fi-based gesture recognition: "Can we use the knowledge learned from some users to perform gesture recognition for others?". This problem is also known as cross-target recognition. It arises in many practical deployments of Wi-Fi-based gesture recognition where it is prohibitively expensive to collect training data from every single user. We present CrossGR, a low-cost cross-target gesture recognition system. As a departure from existing approaches, CrossGR does not require prior knowledge (such as who is currently performing a gesture) of the target user. Instead, CrossGR employs a deep neural network to extract user-agnostic but gesture-related Wi-Fi signal characteristics to perform gesture recognition. To provide sufficient training data to build an effective deep learning model, CrossGR employs a generative adversarial network to automatically generate many synthetic training data from a small set of real-world examples collected from a small number of users. Such a strategy allows CrossGR to minimize the user involvement and the associated cost in collecting training examples for building an accurate gesture recognition system. We evaluate CrossGR by applying it to perform gesture recognition across 10 users and 15 gestures. Experimental results show that CrossGR achieves an accuracy of over 82.6% (up to 99.75%). We demonstrate that CrossGR delivers comparable recognition accuracy, but uses an order of magnitude less training samples collected from the end-users when compared to state-of-the-art recognition systems.

Download Full-text