scholarly journals The formation of intermediate layers in covered Ge/Si heterostructures with low-temperature quantum dots: a study using high-resolution transmission electron microscopy and Raman spectroscopy

2020 ◽  
Vol 35 (4) ◽  
pp. 045012
Author(s):  
Mikhail S Storozhevykh ◽  
Larisa V Arapkina ◽  
Sergey M Novikov ◽  
Valentyn S Volkov ◽  
Oleg V Uvarov ◽  
...  
2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.


2010 ◽  
Vol 645-648 ◽  
pp. 347-350 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  

A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.


1997 ◽  
Vol 500 ◽  
Author(s):  
C. Haluschka ◽  
C. Engel ◽  
R. Riedel ◽  
H.-J. Kleebe ◽  
R. Franke

ABSTRACTIn this paper we report on the measurement of electrical properties of multielement ceramics in the ternary Si-C-N system using the impedance spectroscopy. The results were correlated to the chemical composition, the hybridization state and the microstructural characteristics investigated by chemical analysis, X-Ray absorption near edge spectroscopy (XANES), Raman Spectroscopy, high resolution transmission electron microscopy (HRTEM) and X-Ray powder diffraction (XRD).


2005 ◽  
Vol 475-479 ◽  
pp. 361-364 ◽  
Author(s):  
Kenji Matsuda ◽  
Susumu Ikeno

The precipitation sequence of Al-Mg-Si alloys has been studied by high-resolution transmission electron microscopy (HRTEM). G.P. zone is a fine-plate having dimensions of a mono- layer in thickness, 2.5nm in width, and less than 30nm in length. Its elongated direction is parallel to the <100>m direction. Several types of metastable phases were observed in the excess Si alloy and they were classified with the b ’-phase in the balanced alloy. Especially, the b ”-phase was the typical phase in the excess Si alloy aged at low temperature or at the early stage during aging.


2006 ◽  
Vol 21 (12) ◽  
pp. 3109-3123 ◽  
Author(s):  
S. Gupta ◽  
R.J. Patel ◽  
R.E. Giedd

Influence of low and medium energy electron beam (E-beam) irradiation on the single-walled (SW) and multiwalled (MW) carbon nanotube films grown by microwave chemical vapor deposition are investigated. These films were subjected to electron beam energy of 50 keV from scanning electron microscope for 2.5, 5.5, 8.0, and 15 h and 100, 200, and 300 keV from transmission electron microscope electron gun for a few minutes to approximately 2 h continuously. To assess the surface modifications/structural degradation, the films were analyzed prior to and post-irradiation using x-ray diffraction and micro-Raman spectroscopy in addition to in situ monitoring by scanning and high-resolution transmission electron microscopy. A minimal increase in intertube or interplanar spacing (i.e., d002) for MW nanotubes ranging from 3.25–3.29 Å (∼3%) can be analogized to change in c-axis of graphite lattice due to thermal effects measured using x-ray diffraction. Resonance Raman spectroscopy revealed that irradiation generated defects in the lattice evaluated through variation of: the intensity of radial breathing mode (RBM), intensity ratio of D to G band (ID/IG), position of D and G bands and their harmonics (D* and G*). The increase in the defect-induced D band intensity, quenching of RBM intensity, and only a slight increase in G band intensity are some of the implications. The MW nanotubes tend to reach a state of saturation for prolonged exposures, while SW transforming semiconducting to quasi-metallic character. Softening of the q = 0 selection rule is suggested as a possible way to explain these results. It is also suggestive that knock-on collision may not be the primary cause of structural degradation, rather a local gradual reorganization, i.e., sp2+δ ⇔ sp2+δ, sp2 C seems quite possible. Experiments showed that with extended exposures, both kinds of nanotubes displayed various local structural instabilities including pinching, graphitization/amorphization, and forming intra-molecular junction (IMJ) within the area of electron beam focus possibly through amorphous carbon aggregates. They also displayed curling and closure forming nano-ring and helix-like structures while mending their dangling bonds. High-resolution transmission electron microscopy electrons corroborated these conclusions. Manufacturing of nanoscale structures “nano-engineering” of carbon-based systems is tentatively ascribed to irradiation-induced solid-state phase transformation, in contrast to conventional nanotube synthesis from the gas phase.


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