Post-annealing temperature-dependent electrical properties of thin-film transistors with a ZnO channel and HfOx gate insulator deposited by atomic layer deposition

2020 ◽  
Vol 35 (7) ◽  
pp. 075013
Author(s):  
Hyerin Lee ◽  
Keonwon Beom ◽  
Minju Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Temperature Dependent ◽  
Post Annealing ◽  
Layer Deposition ◽  
Post Annealing Temperature

scholarly journals Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5622-5628 ◽  
Author(s):  
Yunyong Nam ◽  
Hee-Ok Kim ◽  
Sung Haeng Cho ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Hydrogen Diffusion ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition ◽  
Amorphous Ingazno

We fabricated amorphous InGaZnO thin film transistors (a-IGZO TFTs) with aluminum oxide (Al2O3) as a gate insulator grown through atomic layer deposition (ALD) method at different deposition temperatures (Tdep).

HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

2007 ◽  
Vol 515 (12) ◽  
pp. 5109-5112 ◽  
Author(s):  
S.-W. Jeong ◽  
H.J. Lee ◽  
K.S. Kim ◽  
M.T. You ◽  
Y. Roh ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition
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