Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

2017 ◽  
Vol 35 (3) ◽  
pp. 031510 ◽  
Author(s):  
Hanearl Jung ◽  
Il-Kwon Oh ◽  
Seungmin Yeo ◽  
Hyungjun Kim ◽  
Su Jeong Lee ◽  
...  
MRS Advances ◽  
2016 ◽  
Vol 1 (20) ◽  
pp. 1401-1409 ◽  
Author(s):  
Gabriela B. Barin ◽  
Antonio G. Souza Filho ◽  
Ledjane S. Barreto ◽  
Jing Kong

ABSTRACTFabrication of graphene nanostructures it is important for both investigating their intrinsic physical properties and applying them into various functional devices. In this work we present a study on atomic layer deposition (ALD) of Al2O3 to produce patterned graphene through area-selective chemical vapor deposition (CVD) growth. A systematic parametric study was conducted to determine how the number of cycles and the purging time affect the morphology and the electrical properties of both graphene and Al2O3 layers.


2019 ◽  
Vol 16 (12) ◽  
pp. 1900127 ◽  
Author(s):  
Morteza Aghaee ◽  
Joerie Verheyen ◽  
Alquin A. E. Stevens ◽  
Wilhelmus M. M. Kessels ◽  
Mariadriana Creatore

Sign in / Sign up

Export Citation Format

Share Document