Electrical-mechanical coupling performance of gallium arsenide under nanoindentation

2020 ◽  
Vol 35 (12) ◽  
pp. 125015
Author(s):  
Lixia Xu ◽  
Lingqi Kong ◽  
Sihan Liu ◽  
Shunbo Wang ◽  
Hongwei Zhao
2019 ◽  
Vol 13 (3) ◽  
pp. 5334-5346
Author(s):  
M. N. Nguyen ◽  
L. Q. Nguyen ◽  
H. M. Chu ◽  
H. N. Vu

In this paper, we report on a SOI-based comb capacitive-type accelerometer that senses acceleration in two lateral directions. The structure of the accelerometer was designed using a proof mass connected by four folded-beam springs, which are compliant to inertial displacement causing by attached acceleration in the two lateral directions. At the same time, the folded-beam springs enabled to suppress cross-talk causing by mechanical coupling from parasitic vibration modes. The differential capacitor sense structure was employed to eliminate common mode effects. The design of gap between comb fingers was also analyzed to find an optimally sensing comb electrode structure. The design of the accelerometer was carried out using the finite element analysis. The fabrication of the device was based on SOI-micromachining. The characteristics of the accelerometer have been investigated by a fully differential capacitive bridge interface using a sub-fF switched-capacitor integrator circuit. The sensitivities of the accelerometer in the two lateral directions were determined to be 6 and 5.5 fF/g, respectively. The cross-axis sensitivities of the accelerometer were less than 5%, which shows that the accelerometer can be used for measuring precisely acceleration in the two lateral directions. The accelerometer operates linearly in the range of investigated acceleration from 0 to 4g. The proposed accelerometer is expected for low-g applications.


Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.


Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.


2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.


2004 ◽  
Vol 8 (5-6) ◽  
pp. 709-734 ◽  
Author(s):  
Euripides Papamichos
Keyword(s):  

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