Below-diffract ion-limited hybrid recording using silicon thin film super-resolution structure

2009 ◽  
Vol 18 (12) ◽  
pp. 5370-5374
Author(s):  
Jiao Xin-Bing ◽  
Wei Jing-Song ◽  
Gan Fu-Xi
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.


1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan

2021 ◽  
Vol 41 ◽  
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Author(s):  
Simone Casino ◽  
Thomas Beuse ◽  
Verena Küpers ◽  
Markus Börner ◽  
Tobias Gallasch ◽  
...  

2020 ◽  
Vol 91 (12) ◽  
pp. 123703
Author(s):  
Adriano Vissa ◽  
Maximiliano Giuliani ◽  
Peter K. Kim ◽  
Christopher M. Yip

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  

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