Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes

2010 ◽  
Vol 19 (4) ◽  
pp. 047305 ◽  
Author(s):  
Chen Feng-Ping ◽  
Zhang Yu-Ming ◽  
Zhang Yi-Men ◽  
Lü Hong-Liang ◽  
Song Qing-Wen
Keyword(s):  
Schottky Diodes ◽  
Simulation Research ◽  
Field Plate ◽  
Edge Termination

Design rules for field plate edge termination in SiC Schottky diodes

2001 ◽  
Vol 48 (12) ◽  
pp. 2659-2664 ◽  
Author(s):  
M.C. Tarplee ◽  
V.P. Madangarli ◽  
Quinchun Zhang ◽  
T.S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Design Rules ◽  
Field Plate ◽  
Edge Termination

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

2000 ◽  
Vol 338-342 ◽  
pp. 1223-1226 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
M. Tarplee ◽  
Tangali S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Current Spreading ◽  
Field Plate ◽  
Edge Termination ◽  
Lateral Current

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

2021 ◽  
Vol 55 (2) ◽  
pp. 243-249
Author(s):  
P. A. Ivanov ◽  
N. M. Lebedeva ◽  
N. D. Il’inskaya ◽  
M. F. Kudoyarov ◽  
T. P. Samsonova ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Plate Edge ◽  
Field Plate ◽  
Edge Termination

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

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