Effect of electrical contact on the performance of WSe2 field effect transistor

2020 ◽  
Author(s):  
Yi-Di Pang ◽  
En-Xiu Wu ◽  
Zhi-Hao Xu ◽  
Xiao-Dong Hu ◽  
Sen Wu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Contact ◽  
Effect Transistor

Oxide-induced deterioration of TiSi2 source/drain MOSFET contacts

1994 ◽  
Vol 52 ◽  
pp. 862-863
Author(s):  
N. David Theodore ◽  
Vida Ilderem ◽  
Ming Pan
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Contact ◽  
Contact Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Simple Process ◽  
Effect Transistor ◽  
And Behavior ◽  
Lower Resistivity

A simple process for formation of a metal-oxide-semiconductor field-effect transistor (MOSFET) involves fabrication of a polysilicon/oxide gate between source and drain regions. Contact is made to source/drain regions by use of TiSi2 layers followed by Al(Cu) metal lines. A silicide layeris used toreduce contact resistance. TiSi2 is chosen as a contact layer because in the C54phase, the silicide has a lower resistivity (~12 μΏ-cm) than most other silicides (except for CoSi2 ~10-15 μΏ-cm). During formation of TiSi2 contact layers to MOSFET source/drain regions, a deterioration of the TiSi2 is occasionally observed. The deterioration typically consists of buckling and delamination of Ti(TiSi2) films from the source/drain regions. When buckling occurs, electrical contact between Al metal and MOSFET source/drain regions is quite poor. The present study investigates the microstructure and behavior of TiSi2 contact layers used at source/drain regions of MOSFETs. The cause of deterioration of contact-layers is investigated and a potential solution to this problem is explored.

Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric

2022 ◽  
Author(s):  
Dae Hyun Jung ◽  
Guen Hyung Oh ◽  
Sang-il Kim ◽  
TAEWAN KIM
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Electrical Contact ◽  
Chemical Vapour ◽  
Metal Electrode ◽  
Electrical Contact Resistance ◽  
Ion Gel ◽  
Effect Transistor

Abstract A top-gate field-effect transistor (FET), based on monolayer (ML) tungsten disulfide (WS2), and with an ion-gel dielectric was developed. The high electrical contact resistance of the Schottky contacts at the n-type transition metal dichalcogenides/metal electrode interfaces often adversely affects the device performance. We report the contact resistance and Schottky barrier height of an FET with Au electrodes. The FET is based on ML WS2 that was synthesised using chemical vapour deposition and was assessed using the transfer-length method and low-temperature measurements. Raman and photoluminescence spectra were recorded to determine the optical properties of the WS2 layers. The ML WS2 FET with an ion-gel top gate dielectric exhibits n-type behaviour, with a mobility, on/off ratio of 1.97 cm2/V·s, 1.51×105, respectively.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document