Comparative Study of High Temperature Anti-oxidation Property of Sputtering Deposited Stoichiometric and Si-rich SiC Films

2021 ◽  
Author(s):  
Hang-hang WANG ◽  
Wen-qi LU ◽  
Jiao ZHANG ◽  
Jun XU
Keyword(s):  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Rf Magnetron Sputtering ◽  
Temperature Oxidation ◽  
Ecr Plasma ◽  
Depth Direction ◽  
Before And After ◽  
Sic Film ◽  
Sic Films

Abstract Stoichiometric and silicon-rich (Si-rich) SiC films were deposited by Microwave Electron Cyclotron Resonance (MW-ECR) plasma enhanced RF magnetron sputtering method. As-deposited films were oxidized at 800, 900 and 1000 ℃ in air for 60 min. The chemical composition and structure of the films were analyzed by X-ray Photoelectron Spectroscopy (XPS), Raman spectroscopy and Fourier Transform Infrared spectroscopy (FT-IR). The surface morphology of the films before and after high temperature oxidation was measured by atomic force microscopy. The mechanical property of the films was measured by a Nano-indenter. The anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC film. The oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth direction. The large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.

Highly resistive sputtered ZnO films implanted with copper

1996 ◽  
Vol 11 (10) ◽  
pp. 2463-2469 ◽  
Author(s):  
M. K. Puchert ◽  
A. Hartmann ◽  
R. N. Lamb ◽  
J. W. Martin
Keyword(s):  
Photoelectron Spectroscopy ◽  
Defect Density ◽  
Rf Magnetron Sputtering ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Zno Films ◽  
Hole State ◽  
X Ray ◽  
Before And After ◽  
Postimplantation Annealing

Polycrystalline (0001)-oriented thin films of ZnO (thickness 120 nm) were deposited by rf magnetron sputtering and post-deposition annealed at 500 °C in oxygen (1 atm). The films were subsequently implanted with copper at doses over the range 1016 to 1017 ions/cm2. X-ray diffraction (XRD) indicates the compressive intrinsic film stress is largely relieved by the preimplantation anneal, and does not change when implanted or when further annealed after implantation, suggesting that the dominant cause of intrinsic stress is the atomic packing density rather than the crystallographic defect density. Resistivity measurements indicate that annealing of pure ZnO films causes the perpendicular resistivity to increase from 1.3 × 105 Ω · cm to 5 × 1010 Ω · cm. Copper implantation results in a lower resistivity of the order of 107 Ω · cm, but subsequent annealing actually increases resistivity beyond that of annealed nonimplanted ZnO to 3 × 1012 Ω · cm. It is proposed that copper increases the resistivity of those annealed films by trapping free electrons with the Cu 3d hole state occurring in CuO (formed predominantly during annealing). In order to check this, the oxidation state of the implanted copper was studied before and after annealing by x-ray photoelectron spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS). Three oxidation states of copper (Cu0, Cu1+, Cu2+) are detected in the implanted films, and postimplantation annealing results in oxidation of copper to the Cu2+ state, confirming that the presence of CuO in ZnO is associated with increased resistivity.

Boron Nitride Materials for Tribological and High Temperature High Power Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
N. Badi ◽  
A. Tempez ◽  
D. Starkov ◽  
N. Medelcr ◽  
A. Bensaoula ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Optical Damage ◽  
Force Microscopy ◽  
Ecr Plasma

ABSTRACTBoron nitride thin films on sapphire substrates were investigated for their tribological and optoelectronic applications. A gridless end Hall gun source and an electron cyclotron resonance (ECR) source were used for nitrogen species delivery while pure boron was evaporated at a rate of 0.2 Å/s. The surface stability of these thin films was investigated by high temperature annealing. Atomic force microscopy (AFM), friction force microscopy (FFM), and Knoop microhardness measurements were performed on the materials in order to assess their merits as tribological coatings. Finally, BN thin films were subjected to laser transient photoconductivity (TPC) experiments to determine both their optical laser damage threshold as well as their photoconductivity characteristics. For both single-pulse shot and multiple-pulse irradiation regimes, preliminary tests showed the higher the ion beam current used during growth (70–150 mA), the higher the optical damage threshold. The lower damage threshold was typical of BN films grown using an ECR plasma source and was measured to be in the range of ∼50 MW/cm2. Optical damage of films grown at ion beam currents above 100 mA was not observed at laser intensities up to few hundreds MW/cm2. A multiphoton excitation technique was utilized to obtain PC signals from this wide band gap material and preliminary results show that unusual PC voltage amplitudes as high as 0.5 V were observed.

High Temperature Oxidation Behavior of (Ti, Al) C Ceramic Coatings on Carbon Steel Prepared by Electrical Discharge Coating in Kerosene

2011 ◽  
Vol 189-193 ◽  
pp. 186-192 ◽  
Author(s):  
Guo Liang Li ◽  
Xiao Hua Jie ◽  
Ling He
Keyword(s):  
High Temperature ◽  
Carbon Steel ◽  
Electrical Discharge ◽  
High Temperature Oxidation ◽  
Ceramic Coating ◽  
Ceramic Coatings ◽  
Compact Structure ◽  
Temperature Oxidation ◽  
Before And After ◽  
High Temperature Oxidation Behavior

Multi-component metal ceramic coating（Ti, Al）C was prepared on the 0.45% carbon steel by electrical discharge coating (EDC) in a hydrocarbon medium. The coating of the samples before and after oxidation was analyzed by different methods including X-ray diffraction (XRD), scanning electron spectroscopy (SEM) and energy disperse spectroscopy (EDS).The thermogravimetric technique was used to approximate the kinetics of oxidation of the coated and the uncoated samples.The results indicated that the thickness of the coating was about 20μm, and the composition of the ceramic coating mainly consisted of (Ti, Al) C and a little Ti3AlC. An oxide film with compact structure formed after 600°C oxidation for 200h, and it was mainly composed of Al2O3and TiO2, which inhibited further oxygen diffusion into the coating. The (Ti, Al) C ceramic coating possessed slow oxidation rate and high temperature oxidation resistance.

scholarly journals High Temperature Anti-Oxidation Behavior and Mechanical Property of Radio Frequency Magnetron Sputtered Cr Coating

Metals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1509
Author(s):  
Guangbin Li ◽  
Yanhong Liu ◽  
Yingchun Zhang ◽  
Huailin Li ◽  
Xiaojing Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Radio Frequency ◽  
Oxidation Behavior ◽  
Zirconium Alloys ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Temperature Oxidation ◽  
High Temperature Steam ◽  
High Temperature Oxidation Behavior ◽  
Cr Coating

A dense and uniform Cr coating was fabricated on the zirconium alloys fuel claddings by radio frequency (RF) magnetron sputtering to improve the mechanical and anti-oxidation properties under 1200 °C steam environment. The phase composition and the micro and macro morphologies of the specimens were investigated by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscope (SEM) and optical-microtopography (OM) analyses, and the high-temperature oxidation behavior was evaluated at 1200 °C steam environment for 3000 s. In this paper, there exists a positive correlation between thickness and Vickers hardness (HV), and a negative correlation between surface roughness and bonding force. Radial tensile was introduced to investigate the deformation-resistant performance, and the displacement of the Cr-coated specimen was as low as 2.32 mm, which was much lower than the uncoated zircaloy cladding (3.05 mm). Different thicknesses of Cr coatings were deposited to investigate the oxidation degrees of zircaloy cladding under a high-temperature steam environment. The optimal 6 μm Cr-coated zirconium alloys cladding exhibited an excellent anti-oxidation property, and the weight gain was as low as ~4.12 mg/cm2, which was almost one-third of the uncoated specimen.

Conversion of single crystal Si(100) to SiC film by C2H2

1993 ◽  
Vol 8 (3) ◽  
pp. 535-544 ◽  
Author(s):  
Chien C. Chiu ◽  
Seshu B. Desu
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Smooth Surface ◽  
Reaction Times ◽  
Si Substrate ◽  
Etch Pits ◽  
X Ray ◽  
Sic Film ◽  
Sic Films ◽  
Scanning Electron

SiC thin films grown from the reaction between acetylene (C2H2) and the Si(100) substrates in a horizontal hot-wall CVD reactor by different procedures were studied using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The growth of the SiC films was observed from the behavior of Si2p peaks and their plasmons. A SiC thin film with a thickness of 35 Å and having a smooth surface morphology was obtained in C2H2 diluted by H2 at 1050 °C for a period of 60 min. Etch pits and hillocks were observed with increasing reaction time at 1050 °C. For the conversion conducted in C2H2, but in the absence of H2, a SiC monolayer with smooth morphology was obtained at 950 °C for 7 min and defects were observed for longer reaction times at this temperature. Defects were also observed for reaction times as short as 10 s at higher reaction temperatures (e.g., 1000 °C). H2 seems to play a key role in suppressing the formation of defects and the reaction between C2H2 and Si substrate. The formation of defects was correlated to the out-diffusion of Si in the carbonization process.

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