Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

ABSTRACTOhmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

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Interface-state density estimation of n-type nanocrystalline FeSi 2 /p-type Si heterojunctions fabricated by pulsed laser deposition

Advances in Natural Sciences Nanoscience and Nanotechnology ◽

10.1088/2043-6254/aa7241 ◽

2017 ◽

Vol 8 (3) ◽

pp. 035016

Author(s):

Adison Nopparuchikun ◽

Nathaporn Promros ◽

Phongsaphak Sittimart ◽

Peeradon Onsee ◽

Asanlaya Duangrawa ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Density Estimation ◽

Pulsed Laser ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Laser Deposition ◽

P Type

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Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

Applied Physics Letters ◽

10.1063/1.117933 ◽

1996 ◽

Vol 69 (2) ◽

pp. 230-232 ◽

Cited By ~ 32

Author(s):

Zhi Chen ◽

Dae‐Gyu Park ◽

Francke Stengal ◽

S. Noor Mohammad ◽

Hadis Morkoç

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

P Type

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Interface state density of SiO2/p-type 4H-SiC ( 0001), ( 112¯0), ( 11¯00) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes

Applied Physics Letters ◽

10.1063/1.4946863 ◽

2016 ◽

Vol 108 (15) ◽

pp. 152108 ◽

Cited By ~ 19

Author(s):

Takuma Kobayashi ◽

Seiya Nakazawa ◽

Takafumi Okuda ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

P Type

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Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1525 ◽

2006 ◽

Vol 527-529 ◽

pp. 1525-1528

Author(s):

W. Huang ◽

T. Khan ◽

T. Paul Chow

Keyword(s):

Density Distribution ◽

Valence Band ◽

Conduction Band ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Mos Capacitors ◽

Mos Capacitor ◽

Plasma Enhanced Cvd ◽

P Type

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

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Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.709 ◽

2012 ◽

Vol 717-720 ◽

pp. 709-712 ◽

Cited By ~ 5

Author(s):

Shuji Katakami ◽

Manabu Arai ◽

Kensuke Takenaka ◽

Yoshiyuki Yonezawa ◽

Hitoshi Ishimori ◽

...

Keyword(s):

Interfacial Properties ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Promising Method ◽

Mos Capacitors ◽

Channel Mobility ◽

Mos Devices ◽

Inversion Channel ◽

P Type

We investigated the effect of post-oxidation annealing in wet O2 and N2O ambient, following dry O2 oxidation on the SiC MOS interfacial properties by using p-type MOS capacitors. The interfacial properties were dramatically improved by the introduction of hydrogen or nitrogen atoms into the SiO2/SiC interface, in each POA process. Notably, the N2O-POA process at 1200 °C or higher reduced the interface state density more effectively than the wet-O2-POA process, and offers a promising method to further improve the inversion channel mobility of p-channel SiC MOS devices.

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