Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices
2012 ◽
Vol 717-720
◽
pp. 709-712
◽
Keyword(s):
We investigated the effect of post-oxidation annealing in wet O2 and N2O ambient, following dry O2 oxidation on the SiC MOS interfacial properties by using p-type MOS capacitors. The interfacial properties were dramatically improved by the introduction of hydrogen or nitrogen atoms into the SiO2/SiC interface, in each POA process. Notably, the N2O-POA process at 1200 °C or higher reduced the interface state density more effectively than the wet-O2-POA process, and offers a promising method to further improve the inversion channel mobility of p-channel SiC MOS devices.
Keyword(s):
2009 ◽
Vol 615-617
◽
pp. 789-792
Keyword(s):
2006 ◽
Vol 527-529
◽
pp. 1525-1528
Keyword(s):
2013 ◽
Vol 740-742
◽
pp. 506-509
◽
Keyword(s):
Keyword(s):
2019 ◽
Vol 8
(3)
◽
pp. 5505-5508
2006 ◽
Vol 527-529
◽
pp. 1043-1046
◽