scholarly journals Masking coating formation by the focused ion beams method for plasma chemical treatment

2018 ◽  
Vol 1124 ◽  
pp. 081035 ◽  
Author(s):  
I N Kots ◽  
V S Klimin ◽  
V V Polyakova ◽  
A A Rezvan ◽  
Z E Vakulov ◽  
...  
2021 ◽  
Vol 2086 (1) ◽  
pp. 012033
Author(s):  
A A Rezvan ◽  
J V Morozova ◽  
V S Klimin

Abstract This paper presents a study of the use of silicon Si for element base manufacture of micro- and nanoelectronics by using combined methods of focused ion beams and atomic layer plasma chemical etching. This technology makes it possible to modify surface of Si substrates in the required topology and geometry, followed by removal of atoms to obtain nanoscale elements. The influence of parameters of method of focused ion beams and plasma chemical etching on parameters of the formed structures is analyzed. So, for example, for formation of structures with maximum roughness, it is necessary to increase values of parameters responsible for reactive ion etching, these are such parameters as: the power of capacitive plasma source, the mixing voltage, and the flow rate of an inert gas (argon).


Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.


2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  

2021 ◽  
pp. 2102708
Author(s):  
Yanran Liu ◽  
Yuanyuan Qu ◽  
Yue Liu ◽  
Hang Yin ◽  
Jinglun Liu ◽  
...  

2007 ◽  
Vol 81 (5) ◽  
pp. 696-700 ◽  
Author(s):  
A. A. Trofimova ◽  
M. A. Ryashentseva ◽  
N. Yu. Isaeva ◽  
T. V. Yagodovskaya ◽  
V. D. Yagodovskii

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.


2001 ◽  
Vol 57-58 ◽  
pp. 865-875 ◽  
Author(s):  
J Gierak ◽  
D Mailly ◽  
G Faini ◽  
J.L Pelouard ◽  
P Denk ◽  
...  

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