scholarly journals Masking coating formation by the focused ion beams method for plasma chemical treatment

2018 ◽  
Vol 1124 ◽  
pp. 081035 ◽  
Author(s):  
I N Kots ◽  
V S Klimin ◽  
V V Polyakova ◽  
A A Rezvan ◽  
Z E Vakulov ◽  
...  
Keyword(s):  
Chemical Treatment ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Plasma Chemical ◽  
Coating Formation

scholarly journals Plasma surface treatment of local modify silicon plates

2021 ◽  
Vol 2086 (1) ◽  
pp. 012033
Author(s):  
A A Rezvan ◽  
J V Morozova ◽  
V S Klimin
Keyword(s):  
Chemical Etching ◽  
Atomic Layer ◽  
Plasma Source ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Plasma Chemical ◽  
Si Substrates ◽  
Plasma Surface Treatment ◽  
Plasma Chemical Etching ◽  
Modify Surface

Abstract This paper presents a study of the use of silicon Si for element base manufacture of micro- and nanoelectronics by using combined methods of focused ion beams and atomic layer plasma chemical etching. This technology makes it possible to modify surface of Si substrates in the required topology and geometry, followed by removal of atoms to obtain nanoscale elements. The influence of parameters of method of focused ion beams and plasma chemical etching on parameters of the formed structures is analyzed. So, for example, for formation of structures with maximum roughness, it is necessary to increase values of parameters responsible for reactive ion etching, these are such parameters as: the power of capacitive plasma source, the mixing voltage, and the flow rate of an inert gas (argon).

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

scholarly journals Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Transport ◽  
Ion Beams ◽  
Focused Ion Beams

Direct‐Writing of 2D Diodes by Focused Ion Beams

2021 ◽  
pp. 2102708
Author(s):  
Yanran Liu ◽  
Yuanyuan Qu ◽  
Yue Liu ◽  
Hang Yin ◽  
Jinglun Liu ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Direct Writing

The influence of plasma chemical treatment of nickel and nickel-rhenium catalysts deposited on sibunite on their activity in dehydrogenation

2007 ◽  
Vol 81 (5) ◽  
pp. 696-700 ◽  
Author(s):  
A. A. Trofimova ◽  
M. A. Ryashentseva ◽  
N. Yu. Isaeva ◽  
T. V. Yagodovskaya ◽  
V. D. Yagodovskii
Keyword(s):  
Chemical Treatment ◽  
Plasma Chemical

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

Nano-fabrication with focused ion beams

2001 ◽  
Vol 57-58 ◽  
pp. 865-875 ◽  
Author(s):  
J Gierak ◽  
D Mailly ◽  
G Faini ◽  
J.L Pelouard ◽  
P Denk ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Nano Fabrication
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