scholarly journals Plasma surface treatment of local modify silicon plates

2021 ◽  
Vol 2086 (1) ◽  
pp. 012033
Author(s):  
A A Rezvan ◽  
J V Morozova ◽  
V S Klimin
Keyword(s):  
Chemical Etching ◽  
Atomic Layer ◽  
Plasma Source ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Plasma Chemical ◽  
Si Substrates ◽  
Plasma Surface Treatment ◽  
Plasma Chemical Etching ◽  
Modify Surface

Abstract This paper presents a study of the use of silicon Si for element base manufacture of micro- and nanoelectronics by using combined methods of focused ion beams and atomic layer plasma chemical etching. This technology makes it possible to modify surface of Si substrates in the required topology and geometry, followed by removal of atoms to obtain nanoscale elements. The influence of parameters of method of focused ion beams and plasma chemical etching on parameters of the formed structures is analyzed. So, for example, for formation of structures with maximum roughness, it is necessary to increase values of parameters responsible for reactive ion etching, these are such parameters as: the power of capacitive plasma source, the mixing voltage, and the flow rate of an inert gas (argon).

Plasma-Chemical Etching of Thin Silver Films for Applications of Plasmonics by Inductive-Coupled Argon Plasma

2020 ◽  
pp. 165-180
Author(s):  
I.A. Filippov ◽  
L.E. Velikovskiy ◽  
V.A. Shakhnov
Keyword(s):  
Chemical Etching ◽  
Argon Plasma ◽  
Plasma Source ◽  
Etching Process ◽  
Light Sources ◽  
Plasma Chemical ◽  
Silver Films ◽  
Plasma Sources ◽  
Plasma Chemical Etching ◽  
Theoretical Foundations

The study focuses on the processes of plasma-chemical etching of silver films for the manufacture of photonic elements --- nanoscale light sources, and examines the theoretical foundations of etching processes and the process of plasma formation in plasma-chemical etching facilities. We assessed the introduced technology when forming topological elements in thin films of silver metal, and identified key problems, such as redeposition and non-volatility of the material. The paper presents the results of simulating the etching process for several critical submicron sizes, and, based on the simulation results, shows the dependences of the etching rates on the power of the plasma sources. The focus is on the formation of holes to create a nanoscale light source. Both positive and negative properties of the plasma-chemical etching method using a source of inductive-coupled plasma are considered, and the features of technological facilities used for these processes are outlined. The process of formation of nanoelements in a silver film and the effect of redeposition of material particles as a result of ion sputtering are considered. We propose a two-stage etching process, which makes it possible to form a vertical profile of the walls of the manufactured elements and to avoid the effect of redeposition. We also give recommendations for the processes of etching through an electron-beam resist in facilities with an inductive-coupled plasma source. By optimizing the thicknesses of the resistive mask and plasma sources, we obtained the results of etching nanoscale elements with preservation of geometric shapes

scholarly journals Application of plasma chemical treatment for manufacturing of instrument microstructures based on gallium nitride

2021 ◽  
Vol 2052 (1) ◽  
pp. 012057
Author(s):  
A V Zhelannov ◽  
B I Seleznev
Keyword(s):  
Gallium Nitride ◽  
Inductively Coupled Plasma ◽  
Chemical Etching ◽  
Smooth Surface ◽  
Plasma Source ◽  
Epitaxial Layers ◽  
Plasma Chemical ◽  
Inductively Coupled ◽  
Plasma Chemical Etching ◽  
Vertical Contact

Abstract The epitaxial layers of n-n+-GaN were processed by plasma-chemical etching using a Sentech SI 500 unit equipped with an inductively coupled plasma source. The regimes of gallium nitride processing in chlorine plasma have been established, which make it possible to remove epitaxial layers of the semiconductor down to a depth of 10 μm with a smooth surface. Based on the obtained processing results, prototype samples of Schottky diode microstructures with quasi-vertical contact geometry were manufactured. The effect of pretreatment on the characteristics of instrument microstructures is demonstrated.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Calculating the Nominal Values of the Matching Device Installation of Plasma Chemical Etching

2019 ◽  
Vol 822 ◽  
pp. 594-600
Author(s):  
E.V. Endiiarova ◽  
Singh Ruby
Keyword(s):  
Chemical Etching ◽  
Optimal Performance ◽  
Plasma Chemical ◽  
Plasma Chemical Etching

. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.

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