scholarly journals Monte Carlo simulation of the MTS-N (LiF:Mg,Ti) relative response in function of the photon energy

2021 ◽  
Vol 1826 (1) ◽  
pp. 012050
Author(s):  
G P Cardoso ◽  
M A S Lacerda
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Photon Energy ◽  
Relative Response

scholarly journals Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for >10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors

Instruments ◽  
2021 ◽  
Vol 5 (2) ◽  
pp. 17
Author(s):  
Eldred Lee ◽  
Kaitlin M. Anagnost ◽  
Zhehui Wang ◽  
Michael R. James ◽  
Eric R. Fossum ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Yield ◽  
Photon Energy ◽  
High Efficiency ◽  
High Energy ◽  
Yield Enhancement ◽  
X Ray ◽  
Simulation Results ◽  
Conversion Efficiencies

High-energy (>20 keV) X-ray photon detection at high quantum yield, high spatial resolution, and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10 keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuation layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to ≤10 keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that a 10–30× increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.

Photon energy-modulated radiotherapy: Monte Carlo simulation and treatment planning study

2012 ◽  
Vol 39 (3) ◽  
pp. 1265-1277 ◽  
Author(s):  
Jong Min Park ◽  
Jung-in Kim ◽  
Chang Heon Choi ◽  
Eui Kyu Chie ◽  
Il Han Kim ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Treatment Planning ◽  
Photon Energy ◽  
Planning Study

Influence of photon energy cuts on PET Monte Carlo simulation results

2012 ◽  
Vol 39 (7Part1) ◽  
pp. 4175-4186 ◽  
Author(s):  
Krasimir Mitev ◽  
Georgi Gerganov ◽  
Assen S. Kirov ◽  
C. Ross Schmidtlein ◽  
Yordan Madzhunkov ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Photon Energy ◽  
Simulation Results

Monte Carlo Simulated the Detection Efficiency of Different H/R Ratio of NaI:Ti Crystal

2014 ◽  
Vol 529 ◽  
pp. 391-394
Author(s):  
Jun Peng Hu ◽  
Fang Liu ◽  
Xiao Ping Ouyang
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Photon Energy ◽  
Detection Efficiency ◽  
Detector Efficiency ◽  
Incubation Effect ◽  
Optimal Dimension ◽  
R Ratio ◽  
Efficiency Increase ◽  
Γ Rays

We make use of Monte Carlo simulation to investigate the detection efficiency versus different H/R ratio of NaI:Tl detectors, and the volume of detector is constant. The energy of incident monoenergetic γ rays is 4.438 MeV, 1.331 MeV and 0.662 MeV emitted from AmO2Be,137Cs and60Co respectively. The size of NaI:Tl detector dimension is setted up to 20 groups of different radius (H) and height (R), whereas the volume of NaI:Tl crystal will not be changed. The result reveals that the detector efficiency dependence on H/R ratio of the NaI:Tl detector and the incident γ-photon energy. For very low H/R ratio, the detector efficiency increase rapidly and tend to be stable. We draw a conclusion that when the H/R ratio is approximately equal to 1.5, the incubation effect is more obvious, which contribute to the increase of detection efficiency. It is meaningful of the research, namely, it be beneficial to design the optimal dimension of detector for detecting γ rays of 4.438 MeV, 1.331 MeV and 0.662 MeV.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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