Polarized Raman spectroscopy of GaP nanowires under 5% elastic strain

Optical porperties of highly-strained gallium phosphide nanowires were investigated via polarized Raman spectroscopy. 5% elastic strain was created in individual nanowire lying on nickel substrate by the means of atomic force microscopy. Micro-Raman mapping along the nanowire cross section in parallel and perpendicular polarization was carried out. Strain-induced effects on transverse optical mode position and shape were analyzed. The pronounced splitting of the mode due to high level of strain was observed. It was found that in parallel polarization the mode shape is sensitive to the position of the pumping spot which can be attributed to enhanced light-nanowire coupling effects.