scholarly journals Obtaining thin metal films and their compounds using magnetron sputtering and arc evaporation in a single technological cycle

2021 ◽  
Vol 2059 (1) ◽  
pp. 012022
Author(s):  
D E Shashin ◽  
N I Sushentsov
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Metal Films ◽  
Thin Metal ◽  
Performance Characteristics ◽  
Processing Unit ◽  
Thin Metal Films ◽  
Technological Cycle ◽  
Arc Evaporation

Abstract The authors of the article consider the possibility of obtaining thin films using magnetron sputtering and arc evaporation. The prospects of combining these methods in a single processing unit for obtaining films with high performance characteristics have been shown.

Nucleation and Growth Characteristics of Thin Metal Films

1971 ◽  
Vol 29 ◽  
pp. 216-217
Author(s):  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Metal Films ◽  
Nucleation And Growth ◽  
Growth Characteristics ◽  
Thin Metal ◽  
Nucleation Theory ◽  
Classical Nucleation Theory ◽  
Thin Metal Films ◽  
Initial Deposition

This paper reports observations of nucleation and growth characteristics of thin metal films vapor deposited onto heated sodium chloride substrates. An attempt is made to explain the differences in nucleation and growth characteristics on the basis of classical nucleation theory.Thin metal films were prepared by vapor deposition onto heated NaCl (001) substrates in a commercial vacuum unit using a constant evaporation rate of approximately 1000 Å/sec. In the case of discontinuous thin films, approximately 200 Å of carbon was deposited for support. Samples for electron microscopy were prepared by standard techniques and were observed at 125 kV. Figs. 1(a) to (c) show a growth sequence of gold thin films characterized by 1) the formation of random, three dimensional, isolated nuclei at initial deposition, and their growth with further deposition predominantly by surface diffusion; 2) coalescence of these nuclei forming bigger islands; 3) the flattening of islands and formation of network structure : and 4) the filling up of these network structures with further deposition forming a continuous film.

scholarly journals The effect of heat and of solvents on thin films of metal

1904 ◽  
Vol 72 (477-486) ◽  
pp. 226-235 ◽  
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
The Past ◽  
Series Of Experiments

In the Bakerian Lecture of 1857,* on “ Experimental Relations of Gold and other Metals to Light,” Faraday described a series of experiments which were designed to throw light on the structure and behaviour of metals in their most attenuated forms. Probably the most remarkable of these experiments were those in which leaves and films of gold and silver supported on glass were changed by a temperature much below the melting point of the metal from a moderate translucence to clear transparence and from high metallic reflecting power to comparative deadness. These remarkable experiments seem practically to have dropped out of sight during the past 45 years for, so far, I have found no reference to this particular phenomenon in the papers of more recent workers on the reflecting and absorbing powers of thin metal films, and many physicists to whom I have shown these Faraday films have received them as a novelty.

scholarly journals Sputtering synthesis and optical investigation of octadecanethiol-protected fluorescent Au nanoparticles

2015 ◽  
Vol 39 (8) ◽  
pp. 5895-5897 ◽  
Author(s):  
Yohei Ishida ◽  
Taiki Sumi ◽  
Tetsu Yonezawa
Keyword(s):  
Magnetron Sputtering ◽  
Au Nanoparticles ◽  
Metal Films ◽  
Thin Metal ◽  
Fluorescent Nanoparticles ◽  
Optical Investigation ◽  
Thin Metal Films

Magnetron sputtering produces not only thin metal films but also fluorescent nanoparticles.

The Improvement of Immunity to Electromigration by Means of Microstructural Design

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Grain Growth ◽  
Metal Films ◽  
Thin Metal ◽  
The Self ◽  
Thin Metal Films ◽  
Deposition Technique ◽  
Aluminum Films ◽  
Microstructural Design

AbstractIt is known from literature that the properties of thin films greatly depend on their structuare. Therefore, the microstructural design is attractive for control over the properties of thin metal films used for interconnect metallization.In this paper we discuss the potentialities of the self-ion assisted deposition technique for control over the grain and grain boundary structures of thin metal films and their properties such as resistivity and immunity to electromigration.It was found that resistivity of aluminum films deposited at the 6 kV bias was virtually equal to resistivity of bulk aluminum. Films deposited at the less bias or without it had higher resistivities. Abnormal grain growth was found in 6 kV-films. In films prepared without bias normal grain growth proceeds.

Measuring Plasticity in Confined Cu Thin Films at Different Geometries

2015 ◽  
Vol 651-653 ◽  
pp. 987-992
Author(s):  
Yang Mu ◽  
Wen Jin Meng
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Axial Direction ◽  
Metal Films ◽  
Shear Loading ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Cu Films ◽  
Testing Protocol ◽  
Micro Pillars

We report quantitative measurement of plasticity in confined Cu thin films with a new micro-pillar testing protocol. Polycrystalline Cu and CrN thin films were sequentially sputter deposited onto Si (100) substrates, forming thin film assemblies in which polycrystalline Cu thin films of various thicknesses were confined between non-deforming Si and CrN. Cylindrical micro-pillars of CrN/Cu/Si were fabricated through scripted focused Ga+ ion beam milling, with the interfaces either normal to the axial direction or at a 45° inclination. The CrN/Cu/Si micro-pillars were compression loaded in the axial direction with a flat diamond punch on an instrumented nanoindenter. The axial compression loading caused extensive plasticity within the thin Cu interlayers with the interfaces in both the normal and inclined orientations, but with distinctly different responses. We show that significant plastic flow occurs within the confined Cu thin films in both normal compression and shear loading. The flow stress of the confined Cu films is dependent on the Cu layer thickness and the deformation geometry. The presently described micro-pillar testing protocol offers quantitative evaluation of the plastic response of thin metal films under different deformation geometries. The present results offer new experimental examples of scale-dependent plasticity in thin metal films, and new experimental test cases for non-local plasticity theories.

Fatigue Testing of Thin Films

2011 ◽  
Vol 465 ◽  
pp. 552-555 ◽  
Author(s):  
Sofie Burger ◽  
Benjamin Rupp ◽  
Alfred Ludwig ◽  
Oliver Kraft ◽  
Christoph Eberl
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Testing ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
First Results ◽  
Beam Bending ◽  
Film Processing ◽  
Thin Film Processing

Thin film processing has been a driving technology in microelectronics and mechanics for years. The reliability of such devices is often limited by the failure of thin films. Therefore a deeper understanding of fatigue mechanisms of thin films through experiments is necessary to develop physical based lifetime models. Thus, this paper focuses on a novel setup for micro beam bending of thin metal films on Si cantilever substrate and first results will be presented.

A Novel Capacitance Bulge Apparatus and Measurements of the Mechanical Properties of Al Thin Films Using It

2007 ◽  
Vol 345-346 ◽  
pp. 745-748
Author(s):  
Seung Min Hyun ◽  
Walter L. Brown ◽  
Richard P. Vinci
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Metal Films ◽  
Thin Metal ◽  
Mems Devices ◽  
Thin Metal Films ◽  
Silicon Nitride Membrane ◽  
Relaxation Measurements ◽  
The Stability ◽  
Bulge Height

Thin metal films often play an important role as structural elements or reflective surfaces in MEMS applications. Mechanical properties of the films are important due to their influence on the performance of MEMS devices that involve bending or stretching metal parts. In order to gain a better understanding of the mechanical behavior of thin metal films, we have developed a novel bulge system and measured mechanical properties of aluminum thin films. The thin films were prepared by e-beam evaporation of high purity Al onto 2 or 3mm ×12 mm rectangular silicon nitride membrane windows in silicon frames. N2 gas was used to pressurize and thus bulge the membranes. The bulge height was measured based on changes of capacitance between the membrane and a fixed, closely spaced electrode. This apparatus provides resolution of approximately 50 nm in bulge height at a data acquisition rate of 100/sec and provides strain rates in the membrane up to 10-5/sec. The stability of the apparatus allows stress relaxation measurements to be made to times of many hours. Time dependent elastic modulus changes of 1 m Al films were measured over periods of times under constant stress.

the Microstructure and Electrical Resistivity of Cluster-Based thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Jeffery D. Bielefeld ◽  
Ronald P. Andres
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Metal Films ◽  
Thin Metal ◽  
Silver Clusters ◽  
Vacuum Deposition ◽  
Thin Metal Films ◽  
Resistivity Measurements ◽  
Glass Substrates

ABSTRACTCluster-assembled thin metal films exhibit properties which are different from those of films obtained by conventional atomic-deposition. We present TEM data on the evolution of 2-D Microstructure and SFM data on the evolution of 3-D Microstructure in thin films grown by vacuum deposition of preformed silver clusters and of preformed acetylene-silver clusters on flat SiO2, and Mica. Electrical resistivity measurements of cluster-based Ag and Ag/C2H2 films deposited on glass substrates with nominal film thicknesses of 5 nm - 50 nm are also presented and discussed.

scholarly journals Thermodynamic Properties of Free Standing Thin Metal films Investigated Using Statistical Moment Method: Temperature and Pressure Dependence

2014 ◽  
Vol 24 (2) ◽  
pp. 177
Author(s):  
Vu Van Hung ◽  
Duong Dai Phuong ◽  
Nguyen Thi Hoa
Keyword(s):  
Thin Films ◽  
Thermodynamic Properties ◽  
Moment Method ◽  
Metal Films ◽  
Thin Metal ◽  
Thermodynamic Quantities ◽  
Thin Metal Films ◽  
Free Standing ◽  
Metal Thin Films ◽  
Temperature And Pressure

The moment method in statistical dynamics \textit{(SMM)} is used to study thermodynamic properties of free standing thin metal films with face-centered cubic structure (fcc) taking into account the anharmonicity effects of the lattice vibrations and hydrostatic pressures. The explicit expressions of the lattice constant, thermal expansion coefficient, and specific heats at the constant volume and those at the constant pressure, \(C_V\) and \(C_P\)  of the metal thin films are derived in closed analytic forms in terms of the power moments of the atomic displacements. The thermodynamic quantities of Au, Ag, Cu and Al metal thin films are calculated as a function of the temperature and pressure, and they are in good agreement with the corresponding results obtained from other theoretical calculations and experimental values. The effective pair potentials work well for the calculations of fcc metal thin films.

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