A Flexible Solar-blind Ultraviolet Photodetector based on Carbon Nanodots

Abstract A flexible solar-blind ultraviolet (UV) photodetector based on the carbon nanodots (CNDs) was fabricated on a polyethylene terephthalate (PET) substrate. The responsivity of 1.2 mA/W is obtained for 10 V applied bias under 254 nm illumination. Further, bending tests were carried out under the 0.2% strain, and the results showed that this flexible photodetector had stable characteristics and no obviously decrease of the photocurrent. The bending performances exhibit excellent potential for the fabrication of smart and flexible photodetectors.

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Responsivity improvement of a packaged ZnMgO solar blind ultraviolet photodetector via a sealing treatment of silica gel

Journal of Materials Chemistry C ◽

10.1039/c9tc05427h ◽

2020 ◽

Vol 8 (3) ◽

pp. 1089-1094 ◽

Cited By ~ 3

Author(s):

Xing Chen ◽

Liyan Wang ◽

Kewei Liu ◽

Zhenzhong Zhang ◽

Binghui Li ◽

...

Keyword(s):

Silica Gel ◽

High Performance ◽

Ultraviolet Photodetector ◽

Uv Photodetector ◽

Solar Blind ◽

Sealing Treatment

A packaged high performance ZnMgO solar-blind UV photodetector is prepared via a silica gel sealing treatment. The responsivity and stability of the device is improved according to this sealing treatment.

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High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p–n heterojunction

Journal of Materials Chemistry C ◽

10.1039/c9tc06767a ◽

2020 ◽

Vol 8 (13) ◽

pp. 4502-4509 ◽

Cited By ~ 1

Author(s):

Zuyong Yan ◽

Shan Li ◽

Zeng Liu ◽

Yusong Zhi ◽

Jie Dai ◽

...

Keyword(s):

High Sensitivity ◽

Fast Response ◽

Ultraviolet Photodetector ◽

Uv Photodetector ◽

Inorganic P ◽

Solar Blind ◽

Self Powered

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

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An enhanced solar-blind ultraviolet photodetector based on polyvinyl alcohol/carbon nanodots film

Applied Physics A ◽

10.1007/s00339-021-04793-2 ◽

2021 ◽

Vol 127 (9) ◽

Author(s):

Mengru Zhu ◽

Zhiwei Zhao ◽

Yong Fang ◽

Chao Fang ◽

Zhengjin Weng ◽

...

Keyword(s):

Polyvinyl Alcohol ◽

Carbon Nanodots ◽

Ultraviolet Photodetector ◽

Solar Blind

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High-Responsivity Solar-Blind Ultraviolet Photodetectors Based on Carbon Nanodots/Graphene Hybrids

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3051111 ◽

2021 ◽

Vol 68 (3) ◽

pp. 1101-1106

Author(s):

Yong Fang ◽

Zhiwei Zhao ◽

Mengru Zhu ◽

Zhengjin Weng ◽

Chao Fang ◽

...

Keyword(s):

Carbon Nanodots ◽

High Responsivity ◽

Solar Blind ◽

Ultraviolet Photodetectors

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Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.895.41 ◽

2014 ◽

Vol 895 ◽

pp. 41-44

Author(s):

Seiw Yen Tho ◽

Kamarulazizi Ibrahim

Keyword(s):

Thin Film ◽

Thin Films ◽

Polyethylene Terephthalate ◽

Contact Angle Measurement ◽

Angle Measurement ◽

Zno Thin Films ◽

Zno Thin Film ◽

Water Contact ◽

Pre Treatment ◽

Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

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Performance enhancement of p-Si/n-ZnGa2O4 heterojunction solar-blind UV photodetector through interface engineering

Journal of Materials Chemistry C ◽

10.1039/d1tc01705e ◽

2021 ◽

Author(s):

Dongyang Han ◽

Ke-Wei Liu ◽

Jialin Yang ◽

Xing Chen ◽

Binghui Li ◽

...

Keyword(s):

Interfacial Layer ◽

Performance Enhancement ◽

Interface Engineering ◽

Uv Photodetector ◽

Solar Blind

Interface engineering is an effective way to improve the performance of heterojunction photodetectors (PDs). We have constructed the p-Si/n-ZnGa2O4 heterojunction solar-blind ultraviolet (UV) PDs with and without SiO2 interfacial layer...

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Solution-assembled nanowires for high performance flexible and transparent solar-blind photodetectors

Journal of Materials Chemistry C ◽

10.1039/c4tc02297a ◽

2015 ◽

Vol 3 (3) ◽

pp. 596-600 ◽

Cited By ~ 32

Author(s):

Jiangxin Wang ◽

Chaoyi Yan ◽

Meng-Fang Lin ◽

Kazuhito Tsukagoshi ◽

Pooi See Lee

Keyword(s):

High Performance ◽

Switching Time ◽

Ultraviolet Photodetector ◽

Assembly Method ◽

Solar Blind

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.

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Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽

10.1515/nanoph-2018-0061 ◽

2018 ◽

Vol 7 (9) ◽

pp. 1557-1562 ◽

Cited By ~ 25

Author(s):

Tao He ◽

Yukun Zhao ◽

Xiaodong Zhang ◽

Wenkui Lin ◽

Kai Fu ◽

...

Keyword(s):

Response Times ◽

Nanowire Array ◽

Graphene Film ◽

Fast Response ◽

Nanowire Arrays ◽

Monolayer Graphene ◽

Ultraviolet Photodetector ◽

Solar Blind ◽

Decay Times ◽

First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

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