Monolithic transistor switch for microwave radiometry
2021 ◽
Vol 2086
(1)
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pp. 012049
Keyword(s):
Abstract Modern medical microwave diagnostic equipment requires the application of solutions related to the compactness of the developed devices and high performance. Ensuring these requirements is possible by using a modern semiconductor component base based on A3B5 compounds. One of the promising materials for this purpose is gallium nitride. The paper presents the design and manufacturing technology of one of the main control elements of the microwave signal in microwave radiothermometer - monolithic AlGaN/GaN/SiC HEMT SPDT transistor switch.
1974 ◽
Vol 3
(2)
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pp. 77-82
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1987 ◽
Vol 17
(6)
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pp. 63-74
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2002 ◽
Vol 130-131
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pp. 653-661
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2011 ◽
Vol 328-330
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pp. 220-223