Separation of III-N partially-coalesced nanowire arrays from Si substrate
2021 ◽
Vol 2086
(1)
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pp. 012191
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Abstract In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.
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2015 ◽
Vol 9
(5)
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pp. 944-947
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2021 ◽
Vol 21
(11)
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pp. 5648-5652
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2010 ◽
Vol 157
(1)
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pp. H50
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