Probing electric properties of GaP nanowires with Kelvin probe force microscopy
2021 ◽
Vol 2086
(1)
◽
pp. 012207
Keyword(s):
Abstract Surface electronic properties of GaP nanowires were investigated using scanning probe force microscopy. I-V curves of individual free-standing NWs with different doping types were obtained. Surface Fermi level positions in the nanowires of different crystal phases and doping types were extracted using phase-modulated Kelvin probe force microscopy. The results indicate on weak Fermi level pinning in GaP nanowires. The difference between wurtzite and zinc blende GaP work function is observed.
2006 ◽
Vol 83
(11-12)
◽
pp. 2355-2358
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2012 ◽
Vol 29
(12)
◽
pp. 127102
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Keyword(s):
2018 ◽