Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

2006 ◽  
Vol 15 (9) ◽  
pp. 1378-1382
Author(s):  
Takahiro Ishizaki ◽  
Nagahiro Saito ◽  
Riichiro Ohta ◽  
Osamu Takai
Keyword(s):  
Fermi Level ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Depth Profiles ◽  
Amorphous Carbon Nitride

Effect of Hydrogen on the Properties of Amorphous Carbon Nitride Films

2011 ◽  
Vol 383-390 ◽  
pp. 3298-3304 ◽  
Author(s):  
Eliška Mikmeková ◽  
Michal Urbánek ◽  
Tomáš Fořt ◽  
Rosa Di Mundo ◽  
Ondřej Caha
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Low Energy ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Low Energy Electron ◽  
Amorphous Carbon Nitride

The effect of hydrogen on the properties of amorphous carbon nitride films deposited onto Si substrates by magnetron sputtering device has been studied. The influence of hydrogen to roughness, porous character of films, composition and residual stress was investigated by atomic force microscopy, thermal desorption mass spectroscopy, X-ray photoelectron spectroscopy, scanning low energy electron microscopy and by goniometer equipped with Cu X-ray tube. The adding of hydrogen to nitrogen discharge a causes decrease in the high value of compressive stress (elimination of delamination of the films, increasing of nitrogen content in the bulk). On the other hand hydrogen increases roughness and porosity.

scholarly journals Probing electric properties of GaP nanowires with Kelvin probe force microscopy

2021 ◽  
Vol 2086 (1) ◽  
pp. 012207
Author(s):  
V A Sharov ◽  
P A Alekseev ◽  
V V Fedorov ◽  
I S Mukhin
Keyword(s):  
Fermi Level ◽  
Kelvin Probe Force Microscopy ◽  
Scanning Probe ◽  
Kelvin Probe ◽  
Free Standing ◽  
Force Microscopy ◽  
Fermi Level Pinning ◽  
Zinc Blende ◽  
Crystal Phases ◽  
The Difference

Abstract Surface electronic properties of GaP nanowires were investigated using scanning probe force microscopy. I-V curves of individual free-standing NWs with different doping types were obtained. Surface Fermi level positions in the nanowires of different crystal phases and doping types were extracted using phase-modulated Kelvin probe force microscopy. The results indicate on weak Fermi level pinning in GaP nanowires. The difference between wurtzite and zinc blende GaP work function is observed.

Amorphous Carbon Nitride with Three Coordinate Nitrogen (N3 C ) Vacancies for Exceptional NO x Abatement in Visible Light

2021 ◽  
pp. 2004001
Author(s):  
Youyu Duan ◽  
Yang Wang ◽  
Liyong Gan ◽  
Jiazhi Meng ◽  
Yajie Feng ◽  
...  
Keyword(s):  
Visible Light ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Amorphous Carbon Nitride
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