scholarly journals Measurement of the angular distribution of wavelength-shifted light emitted by TPB

2021 ◽  
Vol 16 (12) ◽  
pp. P12013
Author(s):  
J. Schrott ◽  
M. Sakai ◽  
S. Naugle ◽  
G.D. Orebi Gann ◽  
S. Kravitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Monte Carlo Model ◽  
Liquid Argon ◽  
Scintillation Spectrum ◽  
Future Plans

Abstract We present measurements of the angular distribution of re-emitted light from tetraphenyl butadiene thin films when exposed to 128 nm light, which is the peak of the liquid Argon (LAr) scintillation spectrum, in vacuum. Films ranging from 250 nm to 5.5 μm in thickness are measured. All films were fabricated by evaporation deposition on ultraviolet transmitting (UVT) acrylic substrates. Preliminary comparisons of the angular distribution to that produced by a detailed Monte Carlo model are also presented. The current shortcomings of the model are discussed and future plans briefly outlined.

A Monte Carlo model of sputtered vitreous selenium thin films

1973 ◽  
Vol 13 (4) ◽  
pp. 491-494 ◽  
Author(s):  
M.D. Rechtin ◽  
B.L. Averbach
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Monte Carlo Model

Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation

2018 ◽  
Vol 24 (3) ◽  
pp. 215-224
Author(s):  
Abdelkader Bouazza ◽  
Abderrahmane Settaouti
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Great Influence ◽  
Angular Distributions ◽  
High Agreement ◽  
Sputtering Yield ◽  
Two Parameters ◽  
Very High

Abstract The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value E_{\rm max} , sputtering yield will be in maximum Y1_{\rm max} . Applying this E_{\rm max} and with variation in the angular distribution, we will obtain \theta_{\rm max} corresponding to the maximum of sputtering yield Y2_{\rm max} . These two values ( E_{\rm max} , \theta_{\rm max} ) give the maximum of atoms sputtered and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.

3D Monte-Carlo Model of Deposition and Grain Growth in Thin Films

2005 ◽  
Vol 237-240 ◽  
pp. 1281-1286 ◽  
Author(s):  
I.V. Sobchenko ◽  
Andriy Gusak ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Grain Growth ◽  
Monte Carlo Model ◽  
3D Monte Carlo

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

UGR CALCULATION BASED ON THE LUMINANCE SPATIAL-ANGULAR DISTRIBUTION

2020 ◽  
Vol 2020 (4) ◽  
pp. 25-32
Author(s):  
Viktor Zheltov ◽  
Viktor Chembaev
Keyword(s):  
Monte Carlo ◽  
Angular Distribution ◽  
Monte Carlo Method ◽  
Visual Task ◽  
New Method ◽  
Lighting System ◽  
Preliminary Assessment ◽  
System A ◽  
The Monte Carlo Method

The article has considered the calculation of the unified glare rating (UGR) based on the luminance spatial-angular distribution (LSAD). The method of local estimations of the Monte Carlo method is proposed as a method for modeling LSAD. On the basis of LSAD, it becomes possible to evaluate the quality of lighting by many criteria, including the generally accepted UGR. UGR allows preliminary assessment of the level of comfort for performing a visual task in a lighting system. A new method of "pixel-by-pixel" calculation of UGR based on LSAD is proposed.

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