scholarly journals Study of frequency dispersion of capacitance-voltage characteristics of boron-doped diamond Schottky diodes

2021 ◽  
Vol 678 (1) ◽  
pp. 012047
Author(s):  
Anna Solomnikova ◽  
Maksim Tylintsev ◽  
Vadim Lukashkin
Keyword(s):  
Schottky Diodes ◽  
Frequency Dispersion ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Capacitance Voltage

Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond

1992 ◽  
Vol 242 ◽  
Author(s):  
J.W. Glesener ◽  
A.A. Morrish ◽  
K.A. Snail
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Turbulent Flame ◽  
Boron Doped Diamond ◽  
Acceptor Concentration ◽  
Boron Doped ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2163-L2164 ◽  
Author(s):  
Hiromu Shiomi ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Epitaxial Films ◽  
Boron Doped Diamond ◽  
Boron Doped

Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

2008 ◽  
Vol 1 ◽  
pp. 035003 ◽  
Author(s):  
Pierre Muret ◽  
Julien Pernot ◽  
Tokuyuki Teraji ◽  
Toshimichi Ito
Keyword(s):  
Surface Defects ◽  
Schottky Diodes ◽  
Boron Doped Diamond ◽  
Near Surface ◽  
Boron Doped

High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

1987 ◽  
Vol 8 (8) ◽  
pp. 341-343 ◽  
Author(s):  
M.W. Geis ◽  
D.D. Rathman ◽  
D.J. Ehrlich ◽  
R.A. Murphy ◽  
W.T. Lindley
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Point Contact ◽  
Boron Doped Diamond ◽  
Boron Doped

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 183-187
Author(s):  
Chi Kwong Tang ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson ◽  
Eduard Monakhov
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Depletion Region ◽  
Charge Carrier Concentration ◽  
Defect Level ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Wet Chemical ◽  
Transient Spectroscopy ◽  
P Type

The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fei) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fei whereas no detectable passivation of Fe-B or Fei by H occurs.

Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices

1996 ◽  
Vol 423 ◽  
Author(s):  
S. D. Wolter ◽  
T. H. Borst ◽  
P. Gluche ◽  
W. Ebert ◽  
A. Vescan ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Diamond Films ◽  
Silicon Substrates ◽  
Substrate Holder ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
First Time ◽  
Graphite Susceptor

AbstractA new bias-enhanced nucleation method based on an AC-bias step to form highly oriented diamond (HOD) nuclei on silicon substrates is presented. The uniformity of the nucleated film and the bias time strongly depended on the substrate temperature and the substrate holder. In our case the shortest bias time and highest nucleation densities were achieved at ∼ 850°C while using a graphite susceptor. Following this nucleation enhancement step the diamond films were grown out using conditions employing an α-parameter slightly greater than 2. This ultimately leads to extremely smooth and well-faceted (100) textured HOD films which could be used as substrates for the fabrication of electronic devices.Schottky diodes with high rectification ratios and high breakdown voltages have been fabricated for the first time via selective growth of the active boron doped diamond layers on these HOD films. Results of the growth procedure and diode performance will be given.

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

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