Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

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Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices

MRS Proceedings ◽

10.1557/proc-423-63 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 3

Author(s):

S. D. Wolter ◽

T. H. Borst ◽

P. Gluche ◽

W. Ebert ◽

A. Vescan ◽

...

Keyword(s):

Substrate Temperature ◽

Schottky Diodes ◽

Electronic Devices ◽

Diamond Films ◽

Silicon Substrates ◽

Substrate Holder ◽

Boron Doped Diamond ◽

Boron Doped ◽

First Time ◽

Graphite Susceptor

AbstractA new bias-enhanced nucleation method based on an AC-bias step to form highly oriented diamond (HOD) nuclei on silicon substrates is presented. The uniformity of the nucleated film and the bias time strongly depended on the substrate temperature and the substrate holder. In our case the shortest bias time and highest nucleation densities were achieved at ∼ 850°C while using a graphite susceptor. Following this nucleation enhancement step the diamond films were grown out using conditions employing an α-parameter slightly greater than 2. This ultimately leads to extremely smooth and well-faceted (100) textured HOD films which could be used as substrates for the fabrication of electronic devices.Schottky diodes with high rectification ratios and high breakdown voltages have been fabricated for the first time via selective growth of the active boron doped diamond layers on these HOD films. Results of the growth procedure and diode performance will be given.

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Photoluminescence Properties of CVD Diamond Excited by Ultra-Violet Synchrotron Radiation

MRS Proceedings ◽

10.1557/proc-423-717 ◽

1996 ◽

Vol 423 ◽

Author(s):

Jaihyung Won ◽

Akimitsu Hatta ◽

Toshimichi Ito ◽

Takatomo Sasaki ◽

Akio Hiraki

Keyword(s):

Synchrotron Radiation ◽

Defect Formation ◽

Chemical Vapor ◽

Ultra Violet ◽

Cvd Diamond ◽

Photoluminescence Properties ◽

Boron Doped Diamond ◽

Near Surface ◽

Microwave Assisted ◽

Boron Doped

AbstractPhotoluminescence (PL) properties of microwave-assisted chemical-vapor- deposition (CVD) diamond have been studied using ultraviolet synchrotron radiation. The defect-related 5RL PL feature, which was not detected in cathodoluminescence (CL), was observed for both undoped and boron-doped (200ppm) CVD diamond. The defect formation in the thin near- surface layer is discussed in relation to dependence of PL spectra on incident photon energy. In the case of boron-doped diamond, the boron-related peak was detected at 2.3eV while the band-A feature was not observed at 2.9eV. PL excitation (PLE) spectra associated with these emissions are also discussed in relation to absorption coefficients at energies above the band gap.

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