Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond
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ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.
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2013 ◽
Vol 313-314
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pp. 270-274
2021 ◽
Vol 678
(1)
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pp. 012047
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2008 ◽
Vol 600-603
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pp. 619-622
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1999 ◽
Vol 2
(3)
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pp. 155-158
1990 ◽
Vol 29
(Part 2, No. 12)
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pp. L2163-L2164
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