scholarly journals Influence of electron beam irradiation on crosslink behaviour of reclaimed tire rubber/EVA blend in the presence of radiation sensitizers

2020 ◽  
Vol 957 ◽  
pp. 012067
Author(s):  
Suganti Ramarad ◽  
Chantara Thevy Ratnam ◽  
Mohammad Khalid ◽  
Luqman Chuah
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Tire Rubber ◽  
Radiation Sensitizers

scholarly journals Thermochemical compatibilization of reclaimed tire rubber/ poly(ethylene-co-vinyl acetate) blend using electron beam irradiation and amine-based chemical

2021 ◽  
Vol 28 (10) ◽  
Author(s):  
Suganti Ramarad ◽  
Chantara Thevy Ratnam ◽  
Yamuna Munusamy ◽  
Nor Azura Abdul Rahim ◽  
Mathialagan Muniyadi
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
Vinyl Acetate ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Tire Rubber ◽  
Waste Tire ◽  
Waste Tire Rubber ◽  
Poly Ethylene ◽  
Compatibilized Blends

AbstractWaste tire rubber is commonly recycled by blending with other polymers. However, the mechanical properties of these blends were poor due to lack of adhesion between the matrix and the waste tire rubber. In this research, the use of electron beam irradiation and (3-Aminopropyl)triethoxy silane (APTES) on enhancing the performance of 50 wt% reclaimed tire rubber (RTR) blend with 50 wt% poly(ethylene-co-vinyl acetate) (EVA) was investigated. Preparation of RTR/EVA blends were carried out in the internal mixer. The blends were then exposed to electron beam (EB) irradiation at doses ranging from 50 to 200 kGy. APTES loading was varied between 1 to 10 wt%. The processing, morphological, mechanical, and calorimetric properties of the blends were investigated. The stabilization torque and total mixing energy was higher in compatibilized blends. Mechanical properties of RTR/EVA blends were improved due to efficiency of APTES in further reclaiming the RTR and compatibilizing the blends. APTES improved the dispersion of embedded smaller RTR particles in EVA matrix and crosslinking efficiency of the blends. Calorimetric studies showed increased crystallinity in compatibilized blends which corresponds to improved mechanical properties. However, the ductility of the blend was decreased due to increased interaction between EVA and APTES. Presence of APTES increased the efficiency of electron beam irradiation induced crosslinking which was shown through gel content analysis and Charlesby-Pinner equation.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

Sign in / Sign up

Export Citation Format

Share Document