Synthesis and characterization of ZnO-reinforced with graphene nanolayer nanocomposites: electrical conductivity and optical band gap analysis

Two different batches of Gallium (III) sulphide nanocrystals, (α-Ga2S3)1 and (α-Ga2S3)2 were synthesized at room temperature by the reaction of Gallium (III) chloride with sodium thiosulphate in water for 10 and 20 min respectively. The resultant nanoparticles were characterized by different spectroscopic techniques. TEM micrographs showed well-defined, close to hexagonal particles, and the lattice fringes in the HRTEM images confirmed their nanocrystalline nature. The sizes of (α-Ga2S3)1 and (α-Ga2S3)2 were 12 and 35 nm respectively with similar morphologies. Optical band gap energies (3.43 eV/3.41 eV) and photoluminescence peaks 635/641 nm (red shift) and 414/420 nm (blue shift) of the synthesized α-Ga2S3 nanocrystals suggest that they may be promising photocatalysts. Raman spectra for the α-Ga2S3, shows very sharp bands at 119, 135 and 148 cm-1 due to Ga-S2 scissoring.

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Synthesis and Characterization of an Anthracene-Based Low Band Gap Polymer for Photovoltaic Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.8788 ◽

2014 ◽

Vol 14 (8) ◽

pp. 6422-6426 ◽

Cited By ~ 2

Author(s):

In Hwan Jung ◽

Hoyeon Kim ◽

Wonho Lee ◽

Byung Jun Jung ◽

Han Young Woo ◽

...

Keyword(s):

Band Gap ◽

Synthesis And Characterization ◽

Photovoltaic Devices ◽

Low Band Gap ◽

Low Band Gap Polymer

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Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:Nx Films

MRS Proceedings ◽

10.1557/proc-424-119 ◽

1996 ◽

Vol 424 ◽

Author(s):

Hong-Seok Choi ◽

Jae-Hong Jun ◽

Keun-Ho Jang ◽

Min-Koo Han

Keyword(s):

Electrical Conductivity ◽

Band Gap ◽

Vapor Deposition ◽

Material Properties ◽

Laser Annealing ◽

Optical Band Gap ◽

Chemical Vapor ◽

Rf Plasma ◽

Excimer Laser Annealing ◽

Maximum Value

AbstractThe material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:Nx films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH3 and SiH4 gas mixtures. At the 0.35 of NH3/SiH4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10-6 S/cm at the 0.11 of NH3/SiH4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σP/σD ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:Nx films were dominantly affected by the NH3/SiH4 ratio at the 250 mJ/cm2 of laser-annealing energy density.

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Electrical conductivity, density of states and optical band gap in Se90Te6Sn4 glassy semiconductor

Physica B Condensed Matter ◽

10.1016/j.physb.2012.10.018 ◽

2013 ◽

Vol 410 ◽

pp. 201-205 ◽

Cited By ~ 10

Author(s):

Mousa M.A. Imran ◽

Omar A. Lafi

Keyword(s):

Electrical Conductivity ◽

Band Gap ◽

Density Of States ◽

Optical Band Gap ◽

Glassy Semiconductor

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Synthesis and characterization of AgGaS2 nanoparticles: a study of growth and fluorescence

Chemical Communications ◽

10.1039/c7cc08070k ◽

2018 ◽

Vol 54 (1) ◽

pp. 62-65 ◽

Cited By ~ 6

Author(s):

Sky Paderick ◽

Matthew Kessler ◽

Tyler J. Hurlburt ◽

Steven M. Hughes

Keyword(s):

Band Gap ◽

Synthesis And Characterization ◽

Trap State ◽

Gallium Sulfide ◽

Sulfide Nanocrystals

Silver gallium sulfide nanocrystals demonstrate tunability for trap-state emission (650 nm) or band gap fluorescence (460 nm).

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Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

MRS Proceedings ◽

10.1557/proc-730-v5.14 ◽

2002 ◽

Vol 730 ◽

Cited By ~ 1

Author(s):

A. Nuñez Rodriguez ◽

M.T.S. Nair ◽

P.K. Nair

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Conductivity ◽

Silver Nitrate ◽

Band Gap ◽

Chemical Bath Deposition ◽

Optical Band Gap ◽

Sodium Thiosulfate ◽

Xrd Pattern ◽

Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

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