Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:Nx Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Hong-Seok Choi ◽  
Jae-Hong Jun ◽  
Keun-Ho Jang ◽  
Min-Koo Han
Keyword(s):  
Electrical Conductivity ◽  
Band Gap ◽  
Vapor Deposition ◽  
Material Properties ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Excimer Laser Annealing ◽  
Maximum Value

AbstractThe material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:Nx films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH3 and SiH4 gas mixtures. At the 0.35 of NH3/SiH4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10-6 S/cm at the 0.11 of NH3/SiH4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σP/σD ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:Nx films were dominantly affected by the NH3/SiH4 ratio at the 250 mJ/cm2 of laser-annealing energy density.

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

Effect of Various CF4/CH4 Flow Ratios on Structure and Optical Band Gap of Fluorinated Diamond-Like Carbon Thin Films

2010 ◽  
Vol 663-665 ◽  
pp. 312-315
Author(s):  
Jian Rong Xiao ◽  
Tao Tong ◽  
Yan Wei Li ◽  
Xin Hai Li
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Uniform Structure ◽  
Diamond Like Carbon ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

Fluorinated diamond-like carbon (F-DLC) thin films are deposited using radio frequency plasma enhanced chemical vapor deposition under various gas flow ratios. The surface morphology of the F-DLC thin films deposited at lower gas flow ratios is a compact and uniform structure, and it became rough with the increase of gas flow ratios. The relative atomic contents of fluorine and chemical bonding configurations of C-Fx (x=1, 2, 3) in the thin films increases with the increase of gas flow ratios. The optical band gap of the thin films presents a decrease of different degree with the increase of gas flow ratios.

THE OPTICAL CHARACTERISTICS OF NITROGEN-DOPED AMORPHOUS CARBON THIN-FILMS GROWN ON NOVEL HEAT-TOLERANT FLEXIBLE PLASTIC SUBSTRATES BY A NEWLY DEVELOPED MICROWAVE SURFACE WAVE PLASMA CHEMICAL VAPOR DEPOSITION METHOD

2004 ◽  
Vol 11 (06) ◽  
pp. 585-589 ◽  
Author(s):  
M. RUSOP ◽  
A. M. M. OMER ◽  
S. ADHIKARI ◽  
S. ADHIKARY ◽  
H. UCHIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plastic Substrates ◽  
Plasma Chemical Vapor Deposition ◽  
Nitrogen Doped ◽  
Heat Tolerant

Nitrogen-doped amorphous carbon ( a - C : N ) thin-films have been deposited on novel heat tolerant flexible plastic substrates by a newly developed microwave surface wave plasma chemical vapor deposition (MWSWP-CVD) method. Methane gas and also camphor dissolved with ethyl alcohol gas composition have been used as plasma source. Nitrogen gas has been used as a dopant material for a - C : N films. In this paper, the optical characteristics of absorption coefficients and band gaps for a - C : N are discussed. The optical band gap of a - C : N films was found to be approximately 1.7 eV, which is close to the suitable band gap for solar cell. The optical band gap of a - C : N was found to be dependent on the composition gas source pressures.

scholarly journals Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

RSC Advances ◽  
2018 ◽  
Vol 8 (40) ◽  
pp. 22552-22558 ◽  
Author(s):  
Clara Sanchez-Perez ◽  
Caroline E. Knapp ◽  
Ross H. Colman ◽  
Carlos Sotelo-Vazquez ◽  
Raija Oilunkaniemi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Single Source ◽  
2D Semiconductors ◽  
Single Source Precursor ◽  
Pressure Chemical

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1).

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