scholarly journals Optical properties of Dy:YCa4O(BO3)3 crystal grown by the Czochralski technique

2021 ◽  
Author(s):  
Zhangli Shi ◽  
Qingsong Song ◽  
Jian Liu ◽  
Huili Tang ◽  
Qingguo Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Czochralski Technique

A New Metastable Defect in Silicon, Optical Properties and an Investigation of the Mechanism Causing the Configurational Change

1989 ◽  
Vol 163 ◽  
Author(s):  
J. H. Svensson ◽  
B. Monemar
Keyword(s):  
Optical Properties ◽  
Metastable State ◽  
Optical Spectrum ◽  
Auger Recombination ◽  
Optical Transition ◽  
Phonon Energy ◽  
Czochralski Technique ◽  
Configurational Change ◽  
Related Defect ◽  
Metastable Defect

AbstractA new optical transition with a no-phonon energy of 0.615 eV discovered in electron-irradiated silicon grown by the Czochralski technique is investigated, revealing metastable properties of the related defect. The investigation is focused on the optical properties of the transition and its associated structure and on the mechanism governing the change of defect configuration. The transformation of the defect to the metastable state is suggested to be induced by excitonic Auger recombination. A pseudo-donor model is presented as an explanation of the optical spectrum.

Influence of some dopants on optical properties of Bi12GeO20 and Bi12SiO20 single crystals grown by the Czochralski technique

1996 ◽  
Author(s):  
Andrzej Majchrowski ◽  
Mieczyslaw T. Borowiec ◽  
Jozef Zmija ◽  
Henryk Szymczak ◽  
Miroslaw Zaleski
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Czochralski Technique

scholarly journals Growth and Characterization of Single Crystalline Bi4Ge3O12Fibers for Electrooptic High Voltage Sensors

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Stephan Wildermuth ◽  
Klaus Bohnert ◽  
Hubert Brändle ◽  
Jean-Marie Fourmigue ◽  
Didier Perrodin
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
High Voltage ◽  
Bismuth Germanate ◽  
Czochralski Technique ◽  
Voltage Sensors ◽  
Fiber Growth ◽  
Electric Insulation ◽  
Lower Electric Field

The micro-pulling-down technique for crystalline fiber growth is employed to grow fibers and thin rods of bismuth germanate, Bi4Ge3O12(BGO), for use in electrooptic high voltage sensors. The motivation is the growth of fibers that are considerably longer than the typical lengths (100–250 mm) that are achieved by more conventional growth techniques like the Czochralski technique. At a given voltage (several hundred kilovolts in high voltage substation applications) longer sensors result in lower electric field strengths and therefore more compact and simpler electric insulation. BGO samples with lengths up to 850 mm and thicknesses from 300 μm to 3 mm were grown. Particular challenges in the growth of BGO fibers are addressed. The relevant optical properties of the fibers are characterized, and the electrooptic response is investigated at voltages up to .

scholarly journals Влияние неконтролируемых примесей на спектр поглощения лазерного кристалла NaGd(WO-=SUB=-4-=/SUB=-)-=SUB=-2-=/SUB=-

2019 ◽  
Vol 61 (12) ◽  
pp. 2400
Author(s):  
М.П. Зыкова ◽  
К.А. Субботин ◽  
С.К. Павлов ◽  
Д.А. Лис ◽  
Е. Чернова ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Optical Properties ◽  
Optical Absorption ◽  
Inductively Coupled Plasma ◽  
Optical Absorption Spectra ◽  
Czochralski Technique ◽  
Inductively Coupled ◽  
Plasma Mass Spectrometry ◽  
Green Coloration ◽  
Residual Impurities

Three NaGd(WO4)2 single crystals have been grown by Czochralski technique using the initial chemicals with different purity. Impurity concentrations were determined by the inductively coupled plasma mass-spectrometry. The optical absorption spectra of the crystals were measured and the influence of residual impurities' contents on optical properties and coloration of the crystals was determined. It was demonstrated that the green coloration which is sometimes observed for NaGd(WO4)2 crystals results from the presence of residual impurities of d-elements, for which the cromium impurity is the most important

scholarly journals Single crystals of bismuth silicon oxide grown by the czochralski technique and their characterisation

1999 ◽  
Vol 64 (9) ◽  
pp. 553-561 ◽  
Author(s):  
Aleksandar Golubovic ◽  
Slobodanka Nikolic ◽  
Rados Gajic ◽  
Stevan Djuric ◽  
Andreja Valcic
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Silicon Oxide ◽  
Critical Diameter ◽  
Lattice Parameters ◽  
Published Data ◽  
Czochralski Technique ◽  
Critical Rate ◽  
Bismuth Silicon Oxide ◽  
X Ray

Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples to obtain the lattice parameters. The optical properties of the bismuth silicon oxide single crystals were investigated. The obtained results are discussed and compared with published data.

scholarly journals The optical properties of bismuth germanium oxide single crystals

2000 ◽  
Vol 65 (9) ◽  
pp. 611-618 ◽  
Author(s):  
Aleksandar Golubovic ◽  
Rados Gajic ◽  
Changkang Chen ◽  
Andreja Valcic
Keyword(s):  
Optical Properties ◽  
Single Crystals ◽  
Optical Constants ◽  
Published Data ◽  
Germanium Oxide ◽  
Reflection Spectra ◽  
Czochralski Technique ◽  
Phonon Modes ◽  
Bismuth Germanium Oxide ◽  
Wave Numbers

Bi12GeO20 single crystals were grown by the Czochralski technique. Suitable polishing and etching solutions were determined. Reflection spectra were recorded in the wave numbers range 20-5000 cm-1, and compared with the spectra of Bi12SiO20 single crystals to study the position of the phonon modes. The optical constants of the Bi12GeO20 single crystals were obtained using Kramers-Kronig analysis. The obtained results are dicussed and compared with published data.

Design of objective lens for 200-kV high-resolution electron microscopes

1983 ◽  
Vol 41 ◽  
pp. 314-315
Author(s):  
K. Tsuno ◽  
T. Honda ◽  
Y. Harada ◽  
M. Naruse
Keyword(s):  
Optical Properties ◽  
Computer Technology ◽  
Axial Magnetic Field ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Resolution Electron ◽  
Correction Of Astigmatism ◽  
Three Stages ◽  
Electron Microscopes ◽  
Stage 1

Developement of computer technology provides much improvements on electron microscopy, such as simulation of images, reconstruction of images and automatic controll of microscopes (auto-focussing and auto-correction of astigmatism) and design of electron microscope lenses by using a finite element method (FEM). In this investigation, procedures for simulating the optical properties of objective lenses of HREM and the characteristics of the new lens for HREM at 200 kV are described.The process for designing the objective lens is divided into three stages. Stage 1 is the process for estimating the optical properties of the lens. Firstly, calculation by FEM is made for simulating the axial magnetic field distributions Bzc of the lens. Secondly, electron ray trajectory is numerically calculated by using Bzc. And lastly, using Bzc and ray trajectory, spherical and chromatic aberration coefficients Cs and Cc are numerically calculated. Above calculations are repeated by changing the shape of lens until! to find an optimum aberration coefficients.

Optical Properties of HVEM Accelerators

1975 ◽  
Vol 33 ◽  
pp. 180-181
Author(s):  
A. Strojnik ◽  
J.W. Scholl ◽  
V. Bevc
Keyword(s):  
Optical Properties ◽  
Electron Accelerator ◽  
Systematic Investigation ◽  
Electron Source ◽  
High Brightness ◽  
The Past ◽  
Wide Range ◽  
Optical Behavior

The electron accelerator, as inserted between the electron source (injector) and the imaging column of the HVEM, is usually a strong lens and should be optimized in order to ensure high brightness over a wide range of accelerating voltages and illuminating conditions. This is especially true in the case of the STEM where the brightness directly determines the highest resolution attainable. In the past, the optical behavior of accelerators was usually determined for a particular configuration. During the development of the accelerator for the Arizona 1 MEV STEM, systematic investigation was made of the major optical properties for a variety of electrode configurations, number of stages N, accelerating voltages, 1 and 10 MEV, and a range of injection voltages ϕ0 = 1, 3, 10, 30, 100, 300 kV).

Sign in / Sign up

Export Citation Format

Share Document