The regulation of memory effect and its influence on discharge properties of DBD driven by bipolar pulse at atmospheric pressure nitrogen

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Download Full-text

Use of 2½ D imaging in analysis of NiTi martensite

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100110192 ◽

1978 ◽

Vol 36 (1) ◽

pp. 610-611

Author(s):

G. M. Michal

Keyword(s):

Memory Effect ◽

Monoclinic Phase ◽

Reaction Path ◽

Structural Characteristics ◽

Salient Feature ◽

Martensite Phase ◽

Orientation Relationships ◽

Low Symmetry ◽

Hydride Phases ◽

Unusual Shape

Several TEM investigations have attempted to correlate the structural characteristics to the unusual shape memory effect in NiTi, the consensus being the essence of the memory effect is ostensible manifest in the structure of NiTi transforming martensitic- ally from a B2 ordered lattice to a low temperature monoclinic phase. Commensurate with the low symmetry of the martensite phase, many variants may form from the B2 lattice explaining the very complex transformed microstructure. The microstructure may also be complicated by the enhanced formation of oxide or hydride phases and precipitation of intermetallic compounds by electron beam exposure. Variants are typically found in selfaccommodation groups with members of a group internally twinned and the twins themselves are often observed to be internally twinned. Often the most salient feature of a group of variants is their close clustering around a given orientation. Analysis of such orientation relationships may be a key to determining the nature of the reaction path that gives the transformation its apparently perfect reversibility.

Download Full-text

Tensile Failure of 55-Nitinol Wire

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100113858 ◽

1975 ◽

Vol 33 ◽

pp. 46-47

Author(s):

F. I. Grace

Keyword(s):

Shape Memory ◽

Shape Memory Effect ◽

Memory Effect ◽

Stoichiometric Composition ◽

Tensile Failure ◽

Initial State ◽

Initial Shape ◽

Nitinol Wire ◽

Cscl Type ◽

Shear Transformation

An interest in NiTi alloys with near stoichiometric composition (55 NiTi) has intensified since they were found to exhibit a unique mechanical shape memory effect at the Naval Ordnance Laboratory some twelve years ago (thus refered to as NITINOL alloys). Since then, the microstructural mechanisms associated with the shape memory effect have been investigated and several interesting engineering applications have appeared.The shape memory effect implies that the alloy deformed from an initial shape will spontaneously return to that initial state upon heating. This behavior is reported to be related to a diffusionless shear transformation which takes place between similar but slightly different CsCl type structures.

Download Full-text

Electron microscope characterization of MOCVD-grown gap layers on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144991 ◽

1986 ◽

Vol 44 ◽

pp. 724-725

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Atmospheric Pressure ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Lattice Match ◽

Si Substrates ◽

Metal Organic ◽

Good Lattice ◽

Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Download Full-text