Etching of smoothing/without undercutting deep trench in silicon with SF6/O2 containing plasmas

Author(s):  
Wen Wen Zhang ◽  
huang ren rui ◽  
gao qing yao
Keyword(s):  
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.


Author(s):  
Larisa A. Pautova ◽  
Vladimir A. Silkin ◽  
Marina D. Kravchishina ◽  
Valeriy G. Yakubenko ◽  
Anna L. Chultsova

The structure of the summer planktonic communities of the Northern part of the Barents sea in the first half of August 2017 were studied. In the sea-ice melting area, the average phytoplankton biomass producing upper 50-meter layer of water reached values levels of eutrophic waters (up to 2.1 g/m3). Phytoplankton was presented by diatoms of the genera Thalassiosira and Eucampia. Maximum biomass recorded at depths of 22–52 m, the absolute maximum biomass community (5,0 g/m3) marked on the horizon of 45 m (station 5558), located at the outlet of the deep trench Franz Victoria near the West coast of the archipelago Franz Josef Land. In ice-free waters, phytoplankton abundance was low, and the weighted average biomass (8.0 mg/m3 – 123.1 mg/m3) corresponded to oligotrophic waters and lower mesotrophic waters. In the upper layers of the water population abundance was dominated by small flagellates and picoplankton from, biomass – Arctic dinoflagellates (Gymnodinium spp.) and cold Atlantic complexes (Gyrodinium lachryma, Alexandrium tamarense, Dinophysis norvegica). The proportion of Atlantic species in phytoplankton reached 75%. The representatives of warm-water Atlantic complex (Emiliania huxleyi, Rhizosolenia hebetata f. semispina, Ceratium horridum) were recorded up to 80º N, as indicators of the penetration of warm Atlantic waters into the Arctic basin. The presence of oceanic Atlantic species as warm-water and cold systems in the high Arctic indicates the strengthening of processes of “atlantificacion” in the region.


Author(s):  
Lori L. Sarnecki

Abstract This paper presents two new methods using potassium hydroxide (KOH) as a wet etch technique to successfully stop on gate oxide and find the submicron gate oxide failures that correspond to failure response sites. Applications of this new technique to submicron gate oxide failures on both planar and deep trench MOSFET devices are reported in this paper.


2001 ◽  
Author(s):  
Terry Dyer ◽  
Ian J. Doohan ◽  
Martin Fallon ◽  
Dave McAlpine ◽  
Adam Aitkenhead ◽  
...  

2017 ◽  
Vol 392 ◽  
pp. 59-63 ◽  
Author(s):  
Haigui Yang ◽  
Xiaoyi Liu ◽  
Jinsong Gao ◽  
Xiaoyi Wang ◽  
Hai Liu ◽  
...  

2002 ◽  
Author(s):  
Qingxin Zhang ◽  
Jing Li ◽  
Yu Bo Miao ◽  
Ai Q. Liu
Keyword(s):  

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