Deep trench isolation for 600 V SOI power devices

2004 ◽  
Author(s):  
L. Clavelier ◽  
B. Charlet ◽  
B. Giffard ◽  
M. Roy
Keyword(s):  
Power Devices ◽  
Deep Trench ◽  
Trench Isolation

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

20-μm deep trench isolation process characterization for linear bipolar ICs

2001 ◽  
Author(s):  
Terry Dyer ◽  
Ian J. Doohan ◽  
Martin Fallon ◽  
Dave McAlpine ◽  
Adam Aitkenhead ◽  
...  
Keyword(s):  
Deep Trench ◽  
Process Characterization ◽  
Trench Isolation

(Invited) Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation

2021 ◽  
Vol MA2021-01 (34) ◽  
pp. 1094-1094
Author(s):  
Isabella Mica ◽  
Pierpaolo Monge Roffarello ◽  
Didier Dutartre ◽  
Michele Basso ◽  
Alexandra Abbadie ◽  
...  
Keyword(s):  
Extended Defects ◽  
Deep Trench ◽  
Trench Isolation

MOS Capacitor Deep Trench Isolation for CMOS image sensors

2014 ◽  
Author(s):  
N. Ahmed ◽  
F. Roy ◽  
G-N. Lu ◽  
B. Mamdy ◽  
J-P. Carrere ◽  
...  
Keyword(s):  
Image Sensors ◽  
Mos Capacitor ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation

Total Ionizing Dose Effects on CMOS Image Sensors with Deep-Trench Isolation

2014 ◽  
Vol 605 ◽  
pp. 453-456
Author(s):  
Nayera Ahmed ◽  
Guo Neng Lu ◽  
François Roy
Keyword(s):  
Image Sensor ◽  
Parametric Modeling ◽  
Radiation Environment ◽  
Total Ionizing Dose ◽  
Deep Trench ◽  
Cmos Image Sensors ◽  
Trench Isolation ◽  
Before And After ◽  
Total Ionizing Dose Effects ◽  
Different Parts

We have investigated Total Ionizing Dose (TID) effects on a 1.4μm-pitch, Deep-Trench Isolation (DTI) CMOS image sensor for its use in radiation environment. Our investigation includes characterization and TCAD simulations (with parametric modeling) of the image sensor before and after irradiation with 60Co gamma rays source for TID from 3 to 100 Krad. We have obtained agreements between measured results and simulated ones on degradations of the characteristics Quantum Efficiency (QE) and dark current (Idark). The agreements validate our modeling and simulation approach to evaluating these characteristics. It has been shown that TID causes evolution of interface states of different parts of the pixel, which are responsible for QE and Idark degradations. TID effects on different parts of the pixel can be identified and quantified.

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