Effect of High Temperature Stress on Peroxidase Activity and Electrolyte Leakage in Maize in Relation to Sporulation ofBipolaris maydisRace T

1989 ◽  
Vol 79 (7) ◽  
pp. 800 ◽  
Author(s):  
M. O. Garraway
2014 ◽  
Vol 9 (5) ◽  
pp. 105-114
Author(s):  
Md. Shahidul Haque ◽  
◽  
Md. Monirul Islam ◽  
Md. Amirul Islam ◽  
M.M.H. Khan ◽  
...  

2012 ◽  
Vol 518-523 ◽  
pp. 614-618
Author(s):  
Jin Ying Guo ◽  
Ming Ke Shi ◽  
Guo Yan Ren ◽  
Yong Yin ◽  
Shi Ru Jia

The effects of hyperthermia stress was studied in a terrestrial, drought-tolerant alga, Nostoc flagelliforme. The BG11 culture medium were used to culture Nostoc flagelliforme cell at different temperature conditions: 25°C, 35°C,45°Cand 55°C. The physiological and biochemical character of Nostoc flagelliforme cell, such as electrolyte leakage, the activities of superoxide dismutase(SOD), the content of malondialdehyde(MDA), proline(Pro), soluble protein and trehalose were tested after 8h, 12h, 16h and 24h treatment under 40μmol/m2/s. The results showed that: electrolyte leakage and malondialdehyde contents in Nostoc flagelliforme cell were higher under high temperature stress than those in the control group during high temperature stress. In the meanwhile SOD activity increased slightly under the high temperature stress, but were lower afterwards. The contents of Pro, soluble protein and trehalose increased under the moderately high-temperature stress, while declined under extremely high-temperature(55°C) stress.Therefore, it is proposed that the Nostoc flagelliforme cell had a certain extent resistance ability to the high-temperature, the osmotic adjustment function was stimulated, and the SOD activity was improved under certain high-temperature stress, but the Nostoc flagelliforme cell were damaged badly under extremely high-temperature(55°C) stress.


2020 ◽  
Vol 53 (2) ◽  
Author(s):  
Khalil Ahmed Laghari ◽  
Abdul Jabbar Pirzada ◽  
Mahboob Ali Sial ◽  
Muhammad Athar Khan ◽  
Jamal Uddin Mangi

2020 ◽  
Vol 52 (5) ◽  
Author(s):  
De-Gong Wu ◽  
Qiu-Wen Zhan ◽  
Hai-Bing Yu ◽  
Bao-Hong Huang ◽  
Xin-Xin Cheng ◽  
...  

Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.


2020 ◽  
Vol 16 (2) ◽  
pp. 18-23
Author(s):  
K. PRAVALLIKA ◽  
C. ARUNKUMAR ◽  
A. VIJAYKUMAR ◽  
R. BEENA ◽  
V. G. JAYALEKSHMI

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