Determination of Charge-Carrier Mobility and Built-In Potential in Thin-Film Organic M-I-M Diodes from Extraction-Current Transients

2018 ◽  
Vol 10 (5) ◽  
Author(s):  
Staffan Dahlström ◽  
Oskar J. Sandberg ◽  
Mathias Nyman ◽  
Ronald Österbacka
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Current Transients

A novel polymer as a functional dielectric layer for OTFTs to improve the grain size of the pentacene semiconductor

2016 ◽  
Vol 7 (11) ◽  
pp. 2143-2150 ◽  
Author(s):  
Yao Li ◽  
He Wang ◽  
Xuesong Wang ◽  
Zuosen Shi ◽  
Donghang Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Charge Carrier ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Single Variable ◽  
Dielectric Layers ◽  
The Relationship

A series of novel polymers as functional dielectric layers for pentacene thin-film transistors was synthesized and investigated to explore the relationship between the grain size and the charge carrier mobility with a single variable.

scholarly journals Facile synthesis of picenes incorporating imide moieties at both edges of the molecule and their application to n-channel field-effect transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31547-31552
Author(s):  
Yuxin Guo ◽  
Kaito Yoshioka ◽  
Shino Hamao ◽  
Yoshihiro Kubozono ◽  
Fumito Tani ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Active Layer ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Facile Synthesis ◽  
Maximum Charge

Picenediimide derivatives serve as the active layer of n-channel thin-film field-effect transistors displaying a maximum charge carrier mobility as high as 2.0 × 10−1 cm2 V−1 s−1.

Influence of the Structural Properties of Microcrystalline Silicon on the Performance of High Mobility Thin-Film Transistors

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kah Yoong Chan ◽  
Dietmar Knipp ◽  
Reinhard Carius ◽  
Helmut Stiebig
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Volume Fraction ◽  
High Mobility ◽  
Charge Carrier Mobility ◽  
Electron Charge ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon

ABSTRACTThe influence of the crystalline volume fraction of hydrogenated microcrystalline silicon (mc-Si:H) on the performance of thin-film transistors (TFTs) processed at temperatures below 180 °C was investigated. TFTs employing mc-Si:H channel material prepared near the transition to amorphous growth exhibit the highest electron charge carrier mobilities exceeding 50 cm2/Vs. The influence of the crystalline volume fraction of the intrinsic mc-Si:H material on the transistor parameters like the charge carrier mobility and the contact resistance will be discussed.

Sign in / Sign up

Export Citation Format

Share Document