A novel polymer as a functional dielectric layer for OTFTs to improve the grain size of the pentacene semiconductor

2016 ◽  
Vol 7 (11) ◽  
pp. 2143-2150 ◽  
Author(s):  
Yao Li ◽  
He Wang ◽  
Xuesong Wang ◽  
Zuosen Shi ◽  
Donghang Yan ◽  
...  

A series of novel polymers as functional dielectric layers for pentacene thin-film transistors was synthesized and investigated to explore the relationship between the grain size and the charge carrier mobility with a single variable.

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kah Yoong Chan ◽  
Dietmar Knipp ◽  
Reinhard Carius ◽  
Helmut Stiebig

ABSTRACTThe influence of the crystalline volume fraction of hydrogenated microcrystalline silicon (mc-Si:H) on the performance of thin-film transistors (TFTs) processed at temperatures below 180 °C was investigated. TFTs employing mc-Si:H channel material prepared near the transition to amorphous growth exhibit the highest electron charge carrier mobilities exceeding 50 cm2/Vs. The influence of the crystalline volume fraction of the intrinsic mc-Si:H material on the transistor parameters like the charge carrier mobility and the contact resistance will be discussed.


1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.


2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.


2010 ◽  
Vol 1270 ◽  
Author(s):  
Mujeeb Ullah ◽  
Andrey K. Kadashchuk ◽  
Philipp Stadler ◽  
Alexander Kharchenko ◽  
Almantas Pivrikas ◽  
...  

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.


2013 ◽  
Vol 1501 ◽  
Author(s):  
Ronak Rahimi ◽  
D. Korakakis

ABSTRACTIn order to manufacture organic electronic devices with high performance, more detailed studies of the structure and the morphology of the organic materials as well as the underlying physical charge transport mechanisms are warranted. For instance, high efficiency organic thin film transistors (OTFTs) require materials with high charge carrier mobility [1, 2]. The parameters that determine the charge carrier mobility of the device include the structure of the first organic layer at the organic-dielectric interface as well as the morphology and the structural order of the other organic layers. Therefore, fundamental questions about structural properties of organic materials should be answered in order to optimize device performance [2-4].In this work, several bilayer structures of LiF/PTCDI-C8 and LiF/pentacene were prepared and their morphology and molecular structure were characterized using X-ray reflectivity (XRR) technique. In order to study the effects of the films’ structures and dielectric/organic interfacial properties on the device performance, OTFTs based on these bilayers were fabricated and characterized. It has been observed that PTCDI-C8 thin films have higher molecular packing in the LiF/PTCDI-C8 bilayer structure, which results in superior electrical characteristics for OTFTs based on this organic material. Devices with LiF/PTCDI-C8 bilayer exhibit about one order of magnitude higher output current (Ids) at a constant drain-source voltage (Vds) compared to the devices with LiF/pentacene bilayer. The observed differences in the electrical characteristics of these devices can be attributed to the effects of the dielectric/organic interface and the molecular structure of the organic layers.


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