scholarly journals Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

2021 ◽  
Vol 15 (6) ◽  
Author(s):  
Y.C. Wu ◽  
K. Garello ◽  
W. Kim ◽  
M. Gupta ◽  
M. Perumkunnil ◽  
...  
Keyword(s):  
Low Power ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Embedded Applications ◽  
Voltage Gate

scholarly journals Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2020 ◽  
Vol 8 ◽  
pp. 674-680 ◽  
Author(s):  
Xiang Li ◽  
Shy-Jay Lin ◽  
Mahendra Dc ◽  
Yu-Ching Liao ◽  
Chengyang Yao ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory

Calculation and Measurement of Magnetic and Transport Properties of Rectangle Anti-Dot Arrays

2013 ◽  
Author(s):  
Takanori Matsuki ◽  
Shinichi Warisawa ◽  
Ichiro Yamada
Keyword(s):  
Transport Properties ◽  
Random Access ◽  
Magnetic Behavior ◽  
Random Access Memory ◽  
Disk Drive ◽  
Magnetic Films ◽  
High Density ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Thin Magnetic Films

The recent advances in nanofabrication techniques have made it possible to engineer the magnetic and transport properties of thin magnetic films. The ability to design magnetic behavior is useful for technologies such as development of high-density hard disk drive (HDD) or magnetic random access memory (MRAM). In order to achieve high density in HDD, it is necessary to overcome the limit of super-paramagnetic effect. One way to solve this problem is to increase the anisotropic effect that can resist the external field and provide a net magnetic moment in remanence[1].

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