scholarly journals Origin of gaplike behaviors in URu2Si2 : Combined study via quasiparticle scattering spectroscopy and resistivity measurements

2020 ◽  
Vol 102 (8) ◽  
Author(s):  
S. Zhang ◽  
G. Chappell ◽  
N. Pouse ◽  
R. E. Baumbach ◽  
M. B. Maple ◽  
...  
2002 ◽  
Vol 09 (02) ◽  
pp. 1117-1119 ◽  
Author(s):  
L. PERFETTI ◽  
C. ROJAS ◽  
A. REGINELLI ◽  
L. GAVIOLI ◽  
H. BERGER ◽  
...  

We performed angle-resolved photoelectron spectroscopy (ARPES) and resistivity measurements on the layered metal 1T-TiTe 2. We determined the quasiparticle dispersion and lifetime. In particular, we could characterize and separately evaluate the effects of the electron–electron and electron–phonon interactions on the experimental spectra. The good correlation between transport and spectroscopic scattering rates indicates that this material behaves as a model Fermi liquid system.


Author(s):  
N. E. Paton ◽  
D. de Fontaine ◽  
J. C. Williams

The electron microscope has been used to study the diffusionless β → β + ω transformation occurring in certain titanium alloys at low temperatures. Evidence for such a transformation was obtained by Cometto et al by means of x-ray diffraction and resistivity measurements on a Ti-Nb alloy. The present work shows that this type of transformation can occur in several Ti alloys of suitable composition, and some of the details of the transformation are elucidated by means of direct observation in the electron microscope.Thin foils were examined in a Philips EM-300 electron microscope equipped with a uniaxial tilt, liquid nitrogen cooled, cold stage and a high resolution dark field device. Selected area electron diffraction was used to identify the phases present and the ω-phase was imaged in dark field by using a (101)ω reflection. Alloys were water quenched from 950°C, thinned, and mounted between copper grids to minimize temperature gradients in the foil.


Author(s):  
W. E. King

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).


2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.


Author(s):  
Michael Thiel ◽  
◽  
Michael Bower ◽  
Dzevat Omeragic ◽  

1967 ◽  
Vol 6 (47) ◽  
pp. 599-606 ◽  
Author(s):  
Hans Röthlisberger

A brief description of the resistivity method is given, stressing the points which are of particular importance when working on glaciers. The literature is briefly reviewed.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 386
Author(s):  
Magali Allain ◽  
Cécile Mézière ◽  
Pascale Auban-Senzier ◽  
Narcis Avarvari

Tetramethyl-tetraselenafulvalene (TMTSF) and bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF) are flagship precursors in the field of molecular (super)conductors. The electrocrystallization of these donors in the presence of (n-Bu4N)TaF6 or mixtures of (n-Bu4N)TaF6 and (n-Bu4N)PF6 provided Bechgaard salts formulated as (TMTSF)2(TaF6)0.84(PF6)0.16, (TMTSF)2(TaF6)0.56(PF6)0.44, (TMTSF)2(TaF6)0.44(PF6)0.56 and (TMTSF)2(TaF6)0.12(PF6)0.88, together with the monoclinic and orthorhombic phases δm-(BEDT-TTF)2(TaF6)0.94(PF6)0.06 and δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57, respectively. The use of BEDT-TTF and a mixture of (n-Bu4N)TaF6/TaF5 afforded the 1:1 phase (BEDT-TTF)2(TaF6)2·CH2Cl2. The precise Ta/P ratio in the alloys has been determined by an accurate single crystal X-ray data analysis and was corroborated with solution 19F NMR measurements. In the previously unknown crystalline phase (BEDT-TTF)2(TaF6)2·CH2Cl2 the donors organize in dimers interacting laterally yet no organic-inorganic segregation is observed. Single crystal resistivity measurements on the TMTSF based materials show typical behavior of the Bechgaard phases with room temperature conductivity σ ≈ 100 S/cm and localization below 12 K indicative of a spin density wave transition. The orthorhombic phase δo-(BEDT-TTF)2(TaF6)0.43(PF6)0.57 is semiconducting with the room temperature conductivity estimated to be σ ≈ 0.16–0.5 S/cm while the compound (BEDT-TTF)2(TaF6)2·CH2Cl2 is also a semiconductor, yet with a much lower room temperature conductivity value of 0.001 to 0.0025 S/cm, in agreement with the +1 oxidation state and strong dimerization of the donors.


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