Theoretical and experimental studies of optical absorption in strained quantum-well structures for optical modulators

1988 ◽  
Vol 37 (2) ◽  
pp. 878-885 ◽  
Author(s):  
S-C. Hong ◽  
G. P. Kothiyal ◽  
N. Debbar ◽  
P. Bhattacharya ◽  
J. Singh
Keyword(s):  
Optical Absorption ◽  
Quantum Well ◽  
Experimental Studies ◽  
Optical Modulators ◽  
Quantum Well Structures ◽  
Strained Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

1.3 μm luminescence in (InAs) n /(GaAs) n strained quantum-well structures grown on GaAs

2020 ◽  
pp. 577-630
Author(s):  
E. J. Roan ◽  
K. Y. Cheng ◽  
P. J. Pearah ◽  
X. Liu ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well

Electric field dependence of optical absorption near the band gap of quantum-well structures

1985 ◽  
Vol 32 (2) ◽  
pp. 1043-1060 ◽  
Author(s):  
D. A. B. Miller ◽  
D. S. Chemla ◽  
T. C. Damen ◽  
A. C. Gossard ◽  
W. Wiegmann ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Band Gap ◽  
Field Dependence ◽  
Quantum Well Structures ◽  
Electric Field Dependence

Superposition of light-hole and heavy-hole bandgaps in strained quantum-well structures

1991 ◽  
Vol 10 (1) ◽  
pp. 99-106 ◽  
Author(s):  
I.J. Fritz ◽  
J.F. Klem ◽  
T.M. Brennan ◽  
J.R. Wendt ◽  
T.E. Zipperian
Keyword(s):  
Quantum Well ◽  
Heavy Hole ◽  
Light Hole ◽  
Quantum Well Structures ◽  
Strained Quantum Well

A THEORETICAL AND EXPERIMENTAL STUDY OF ELECTRONIC CONFINEMENT, COUPLING, AND TRANSLAYER INTERACTION IN NOBLE-METAL QUANTUM-WELL STRUCTURES

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Noble Metal ◽  
Experimental Studies ◽  
Surface States ◽  
Double Quantum ◽  
Multilayer Systems ◽  
Quantum Well Structures ◽  
Double Quantum Well ◽  
Bloch Electrons

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.

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