Direct measurements of room-temperature oxygen diffusion inYBa2Cu3Ox

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400[Formula: see text]C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O[Formula: see text] and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Download Full-text

Exploring Fast Room Temperature Oxygen Diffusion in Pr2NiO4+δ Stand-Alone Single-Crystalline Electrodes

Chemistry of Materials ◽

10.1021/acs.chemmater.1c03847 ◽

2021 ◽

Author(s):

Avishek Maity ◽

Rajesh Dutta ◽

Oles Sendtskyi ◽

Monica Ceretti ◽

Angélique Lebranchu ◽

...

Keyword(s):

Oxygen Diffusion ◽

Room Temperature ◽

Single Crystalline

Download Full-text

Semiconductor Detectors Fabricated from TlBr Crystals

MRS Proceedings ◽

10.1557/opl.2011.1112 ◽

2011 ◽

Vol 1341 ◽

Cited By ~ 3

Author(s):

Keitaro Hitomi ◽

Tsutomu Tada ◽

Seong-Yun Kim ◽

Yan Wu ◽

Hiromichi Yamazaki ◽

...

Keyword(s):

Energy Resolution ◽

Electron Mobility ◽

Room Temperature ◽

Semiconductor Detectors ◽

Direct Measurements ◽

Spectral Performance

ABSTRACTFrisch collar detectors were fabricated from TlBr crystals with the dimensions of 2 mm × 2 mm × 4.4 mm. Spectroscopic performance of the TlBr Frisch collar detectors was evaluated at room temperature. An energy resolution of 2.9% FWHM at 662 keV was obtained from the detector without the depth correction. The detector exhibited stable spectral performance for 12 hours. Direct measurements of electron mobility-lifetime products were performed with the detectors. The TlBr crystals exhibited the electron mobility-lifetime products of ∼10−3 cm2/V at room temperature.

Download Full-text

Interface induced diffusion

Scientific Reports ◽

10.1038/s41598-021-88808-1 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

S. Gurbán ◽

A. Sulyok ◽

Miklos Menyhárd ◽

E. Baradács ◽

B. Parditka ◽

...

Keyword(s):

Oxygen Diffusion ◽

Room Temperature ◽

Relative Rate ◽

Electron Bombardment ◽

Low Energy ◽

Film System ◽

Si Substrate ◽

Temperature Dependent ◽

Thin Film System ◽

Altered Layer

AbstractInterface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, was different in the vicinity of the interface and in the "bulk" parts of the Al2O3 layer. This difference creates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3/Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx + Si (at 500 °C), Al2O3 + Si (at 700 °C), as the temperature during irradiation varies. Utilizing this finding it is possible to produce area selective interface patterning.

Download Full-text

THE ISOTHERMAL PELTIER COEFFICIENT AND PHONON-DRAG IN COPPER

Canadian Journal of Physics ◽

10.1139/p63-113 ◽

1963 ◽

Vol 41 (7) ◽

pp. 1094-1101 ◽

Cited By ~ 5

Author(s):

W. G. Henry

Keyword(s):

Room Temperature ◽

Phonon Drag ◽

Direct Measurements ◽

Peltier Coefficient ◽

Copper Lead

An apparatus is described for making direct measurements of small Peltier coefficients of the order of 1 mv and less below room temperature. The Kelvin relationship between the thermopower and the isothermal Peltier coefficient is shown to hold for the copper–lead couple from 77.4° to 298° K.

Download Full-text

Room-temperature oxygen diffusion and ordering inYBa2Cu3O7−ystudied with time-resolved Raman spectroscopy

Physical Review B ◽

10.1103/physrevb.42.393 ◽

1990 ◽

Vol 42 (1) ◽

pp. 393-398 ◽

Cited By ~ 16

Author(s):

I. Poberaj ◽

D. Mihailović ◽

S. Bernik

Keyword(s):

Raman Spectroscopy ◽

Oxygen Diffusion ◽

Room Temperature ◽

Time Resolved

Download Full-text

Direct Measurements of Thermal Stress Distributions in Large Die Bonds for Power Electronics

MRS Proceedings ◽

10.1557/proc-515-99 ◽

1998 ◽

Vol 515 ◽

Cited By ~ 7

Author(s):

Jun He ◽

M. C. Shaw ◽

N. Sridhar ◽

B. N. Cox ◽

D. R. Clarke

Keyword(s):

Room Temperature ◽

High Stress ◽

Time Dependent ◽

Stress Distributions ◽

Thermal Expansion Mismatch ◽

Stress Evolution ◽

Complete Understanding ◽

Operational Characteristics ◽

Direct Measurements ◽

Absolute Magnitudes

ABSTRACTLarge semiconductor devices can be subject to significant mechanical stress resulting from thermal expansion mismatch between the devices and packaging materials. This stress can either cause mechanical failure or change the operational characteristics of the device. Furthermore, this stress governs the reliability of the system during use. Therefore, a complete understanding is required of the nature of stress evolution during packaging, and its time and temperature dependence during subsequent service. In the present investigation, the absolute magnitudes and spatial distributions of time-dependent thermal residual stress are measured directly by piezospectroscopic techniques. These measurements are performed with high stress (±15 MPa) and spatial (1 μm) resolution in silicon specimens attached to substrates. Measurements are performed at room temperature on 25 mm square specimens, with continuous, layered solder joints in model specimens of silicon/solder/copper. Room temperature creep relaxation is also investigated. The stress data are then analyzed according to fundamental micromechanical models.

Download Full-text