Directional resolution of the GaAs heavy-hole band dispersion and photoelectron-momentum orientation from hot-electron luminescence

The electronic states near the fundamental gap largely determine the most commonly investigated linear and nonlinear optical properties of quantum wires. We first discuss heavy-hole-light-hole band-mixing effects and illustrate the consequences with an application in opto-electronics, namely a quantum-wire-array based polarization modulator. Next, an overview of polariton effects which determine the time scale for excitonic radiative decay is given and comparison with recent experiments made.

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The magneto-optical properties of Cd3As2 exposed to circularly polarized radiation: interband transitions

Canadian Journal of Physics ◽

10.1139/p87-031 ◽

1987 ◽

Vol 65 (3) ◽

pp. 199-203 ◽

Cited By ~ 6

Author(s):

H. El Alaoui Lamrani ◽

M. J. Aubin

Keyword(s):

Valence Band ◽

Heavy Hole ◽

Transition Probabilities ◽

Spin Splitting ◽

Interband Transitions ◽

Circularly Polarized ◽

Conduction Electrons ◽

Hole Band ◽

Circularly Polarized Radiation ◽

Polarized Radiation

The first measurements of the interband magnetotransmission of Cd3As2 using circularly polarized radiation are reported. The single crystals were mounted in the Faraday configuration at 10 K. An analysis of the experimental results on the basis of the Bodnar model shows that spin splitting of the conduction electrons has been observed. A further analysis of the model shows, however, that it predicts an unrealistic behavior of the valence-band Landau levels (this constitutes the first reported results concerning this band). Thus, it is not possible to fit the data to the model, but by assuming a flat heavy-hole band, a reasonable fit is obtained. A calculation of the transition probabilities also leads to consistent results. It is concluded that changes in the Bodnar model are necessary to describe the valence band correctly.

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Excitonic Properties of ZnSe-ZnS Strained-Layer Superlattices and A Fibonacci Sequence

MRS Proceedings ◽

10.1557/proc-161-199 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 11

Author(s):

Tsunemasa Taguchi ◽

Yoichi Yamada

Keyword(s):

Quantum Wells ◽

Heavy Hole ◽

Thermal Dissociation ◽

Thermal Quenching ◽

Fibonacci Sequence ◽

Type I ◽

Strained Layer ◽

Superlattice Structure ◽

Hole Band ◽

Excitonic Properties

ABSTRACTExcitonic properties of ZnSe-ZnS strained-layer quantum wells (SLQWs) with type I band lineups are reviewed on the basis of our recent results of temperature- and strain-dependent photoluminescence and absorption spectra. In order to estimate the conduction and valence band offsets as a function of ZnSe well thickness, we have modified the “model-solid” theory in which the valence bands (heavy-hole band in ZnSe and light-hole band in ZnS) are relatively moved with strains. Temperature and high excitation dependent studies of the n=1 heavy-hole excitons suggest a localization of excitons and reveals the important evidence on scatterings of excitons with acoustic and optical phonons. The thermal quenching of the exciton emission is caused by thermal dissociation of quasi-two-dimensional excitons through electrons and holes, from which the activation energy for this dissociation is 4 times larger than Ea.3D (a binding energy of bulk exciton) of ZnSe. A new superlattice structure with a quasiperiodic crystal which is derived from a finite Fibonacci sequence, has been fabricated by a low-pressure MOCVD method and its photoluminescence properties are for the first time introduced.

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