Exciton wave function, binding energy, and lifetime in InAs/GaSb coupled quantum wells

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

Download Full-text

Configuration space method for calculating binding energies of exciton complexes in quasi-1D/2D semiconductors

Modern Physics Letters B ◽

10.1142/s0217984916300064 ◽

2016 ◽

Vol 30 (24) ◽

pp. 1630006 ◽

Cited By ~ 6

Author(s):

I. V. Bondarev

Keyword(s):

Binding Energy ◽

Quantum Wells ◽

Configuration Space ◽

Binding Energies ◽

Electron Hole ◽

Coupled Quantum Wells ◽

2D Semiconductors ◽

Crossover Behavior ◽

Confined Structures ◽

Space Method

A configuration space method is developed for binding energy calculations of the lowest energy exciton complexes (trion, biexciton) in spatially confined quasi-1D semiconductor nanostructures such as nanowires and nanotubes. Quite generally, trions are shown to have greater binding energy in strongly confined structures with small reduced electron–hole masses. Biexcitons have greater binding energy in less confined structures with large reduced electron–hole masses. This results in a universal crossover behavior, whereby trions become less stable than biexcitons as the transverse size of the quasi-1D nanostructure increases. The method is also capable of evaluating binding energies for electron–hole complexes in quasi-2D semiconductors such as coupled quantum wells and bilayer van der Walls bound heterostructures with advanced optoelectronic properties.

Download Full-text

EXCITON CONFINEMENT IN SEMICONDUCTOR MULTIPLE QUANTUM WELLS

International Journal of Modern Physics B ◽

10.1142/s0217979290001108 ◽

1990 ◽

Vol 04 (15n16) ◽

pp. 2345-2356

Author(s):

Y. FU ◽

K. A. CHAO

Keyword(s):

Wave Function ◽

Perturbation Theory ◽

Binding Energy ◽

Quantum Wells ◽

Multiple Quantum Well ◽

Three Dimensional ◽

Exciton Binding Energy ◽

Multiple Quantum ◽

Two Dimensional ◽

Barrier Width

Exciton binding energy in semiconductor multiple quantum well (MQW) systems is analyzed with both the variational method and the perturbation theory. The intrinsic deficiency of the use of the two-dimensional exciton envelop wave function is clearly demonstrated. Using a GaAs/Al x Ga 1−xAs MQW as an example to calculate the exciton binding energy with a variational three-dimensional trial envelop function, we found that in many realistic samples the spatial extension of an exciton covers a region of several lattice constant dA + dB, where dA is the barrier width and dB is the well width.

Download Full-text

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

MATEC Web of Conferences ◽

10.1051/matecconf/202033001012 ◽

2020 ◽

Vol 330 ◽

pp. 01012

Author(s):

Walid Belaid ◽

Haddou El Ghazi ◽

Izeddine Zorkani ◽

Anouar Jorio

Keyword(s):

Binding Energy ◽

Quantum Wells ◽

Effective Mass ◽

Variational Approach ◽

Shallow Donor ◽

Donor Impurity ◽

Coupled Quantum Wells ◽

Surrounding Matrix ◽

Main Effect ◽

Good Agreement

In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

Download Full-text

Direct experimental observation of two-dimensional shrinkage of the exciton wave function in quantum wells

Physical Review B ◽

10.1103/physrevb.32.4275 ◽

1985 ◽

Vol 32 (6) ◽

pp. 4275-4278 ◽

Cited By ~ 110

Author(s):

Yasuaki Masumoto ◽

Mitsuru Matsuura ◽

Seigo Tarucha ◽

Hiroshi Okamoto

Keyword(s):

Wave Function ◽

Quantum Wells ◽

Experimental Observation ◽

Two Dimensional ◽

Exciton Wave Function ◽

Dimensional Shrinkage

Download Full-text

Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

Journal of Modeling and Simulation of Materials ◽

10.21467/jmsm.4.1.1-6 ◽

2021 ◽

Vol 4 (1) ◽

pp. 1-6

Author(s):

Redouane En-nadir ◽

Haddou El Ghazi ◽

Anouar Jorio ◽

Izeddine Zorkani

Keyword(s):

Binding Energy ◽

Quantum Wells ◽

Ground State ◽

Shallow Donor ◽

Effect Of Temperature ◽

Position Effects ◽

Coupled Quantum Wells ◽

Impurity Position ◽

Mass Approximation ◽

Donor Binding Energy

In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

Download Full-text

BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

Surface Review and Letters ◽

10.1142/s0218625x02004347 ◽

2002 ◽

Vol 09 (05n06) ◽

pp. 1753-1756 ◽

Cited By ~ 23

Author(s):

A. MONTES ◽

A. L. MORALES ◽

C. A. DUQUE

Keyword(s):

Wave Function ◽

Hydrostatic Pressure ◽

Binding Energy ◽

Electric Field ◽

Quantum Wells ◽

Applied Electric Field ◽

Shallow Donor ◽

Donor Impurity ◽

External Hydrostatic Pressure ◽

Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

Download Full-text