Raman spectroscopy ofCaMnO3:Mode assignment and relationship between Raman line intensities and structural distortions

2002 ◽  
Vol 65 (18) ◽  
Author(s):  
M. V. Abrashev ◽  
J. Bäckström ◽  
L. Börjesson ◽  
V. N. Popov ◽  
R. A. Chakalov ◽  
...  
1987 ◽  
Vol 35 (6) ◽  
pp. 2808-2817 ◽  
Author(s):  
B. Jusserand ◽  
D. Paquet ◽  
F. Mollot ◽  
F. Alexandre ◽  
G. Le Roux
Keyword(s):  

2014 ◽  
Vol 70 (a1) ◽  
pp. C760-C760
Author(s):  
Shigeaki Ono

Cubic boron nitride (c-BN) has some outstanding properties, such as hardness, chemical inertness, high temperature stability, and high thermal conductivity. The Raman spectrum of c-BN exhibits two intense lines at 1054 and 1305 cm-1 under ambient conditions, corresponding to the Brillouin zone center transverse optical (TO) and longitudinal optical (LO) modes, respectively. Previous studies have reported the pressure and temperature dependences of the frequency shift of the modes up to 40 GPa and 2300 K. The Raman line of the LO mode overlaps an intense Raman line of diamond at pressures higher than 3 GPa. Therefore, it is difficult to observe the LO line in high-pressure experiments using the diamond anvil cell. In contrast, previous studies proposed that the TO mode could be used as the pressure calibrant in diamond anvil cells under high pressure and temperature conditions. In this study, we used a diamond anvil cell high-pressure apparatus [1] combined with a Raman spectrometer system to investigate changes in the Raman line of c-BN. The use of a synchrotron radiation source made it possible to determine the precise pressure in the sample chamber. In this study, the temperature and pressure dependences of the Raman spectrum of the TO mode of cubic boron nitride were calibrated for applications to a Raman spectroscopy pressure sensor in optical cells to about 800 K and 90 GPa. A significant deviation from linearity of the pressure dependence is confirmed at pressures above 20 GPa. At ambient temperature, dv/dP slopes are 3.41 and 2.04 cm-1/GPa at 0 and 90 GPa, respectively. The pressure dependence does not significantly change with temperature, as determined from experiments conducted up to 800 K. At pressures above 90 GPa, the Raman spectrum of the TO mode cannot be observed because of an overlap of the signals of cubic boron nitride and diamond used as the anvils in the high-pressure cell.


1995 ◽  
Vol 49 (2) ◽  
pp. 220-223 ◽  
Author(s):  
Daniel R. Lombardi ◽  
Charles K. Mann ◽  
Thomas J. Vickers

We have examined the feasibility of the remote determination of water in a sodium nitrate matrix by fiber-optic Raman spectroscopy with multichannel detection. The direct determination based on the Raman line due to OH bending is shown to be possible but relatively insensitive. A determination based on the ratio of signals due to dissolved and solid nitrate is shown to provide a water detection limit of less than 1% for a measurement time of one minute.


2008 ◽  
Vol 1072 ◽  
Author(s):  
Fei Wang ◽  
William Porter Dunn ◽  
Mukul Jain ◽  
Carter De Leo ◽  
Nicholas Vicker ◽  
...  

ABSTRACTThin films of ternary (GeS3)1−xAgx glasses (x=0.1 and 0.2) are studied in this work. Thin films are fabricated in a vacuum thermal evaporator at 3 different evaporation angles (0°, 30° and 45°). All thin film samples are examined in Raman spectroscopy. Raman results of both normally and obliquely deposited thin film samples reveal Ge-S CS modes (∼340cm−1) , Ge-S ES (∼360cm−1) modes, and thiogermanate modes Q1∼Q3 (390cm−1∼437cm−1). In addition, sharp peaks due to sulfur rings (S8) are observed at 218cm−1 and 470cm−1. Raman line-shapes of thin films are qualitatively consistent with their corresponding bulk glasses. However, the sharp peaks due to sulfur rings were not observed in bulk glasses. By comparing CS modes of thin films of three angles, we observe that normally deposited (0 degree) thin film shows a red-shift in center and a broadening in width. The film thickness of normally deposited films are significantly smaller comparing with that of corresponding obliquely deposited films.


1981 ◽  
Vol 80 (3) ◽  
pp. 445-450 ◽  
Author(s):  
Lap M. Cheung ◽  
David M. Bishop ◽  
David L. Drapcho ◽  
Gerd M. Rosenblatt

1971 ◽  
Vol 44 (4) ◽  
pp. 904-913 ◽  
Author(s):  
J. R. Shelton ◽  
J. L. Koenig ◽  
M. M. Coleman

Abstract It has been demonstrated that Raman spectroscopy can be used to follow changes that occur in the network of vulcanizates as a function of cure time. In the system studied we have found that dialkenyl sulfides, cyclic sulfides and conjugated triene structures parallel the cure. In other words, the Raman lines due to these structures display an asymptotic trend as a function of cure time with the plateau occurring in the region of the optimum cure time. On the other hand those Raman lines assigned to the trans isomer and conjugated dienes do not exhibit the same asymptotic dependence as a function of cure time but show an increase in intensity as the cure time is prolonged up to at least 2 hours at 150° C. This would appear to indicate that these Raman lines are not solely associated with the vulcanization process but that thermal and allied processes may contribute. The Raman line occurring at 440 cm−1 does not show any definitive trend and is unlikely to be associated directly with the network. It is most probably due to unextracted extra-network ZnO present.


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