Highly anisotropic and electric field tunable Zeeman splittings in Mn-doped CdS nanowires

2007 ◽  
Vol 76 (19) ◽  
Author(s):  
Xiu-Wen Zhang ◽  
Wei-Jun Fan ◽  
Shu-Shen Li ◽  
Jian-Bai Xia
2019 ◽  
Vol 33 (16) ◽  
pp. 1950166
Author(s):  
Huan Ma ◽  
Ling Ma ◽  
Liang-Cai Ma

The effect of gas molecule (H2CO, NO, NO2, O2 and SO2) adsorption on the electronic and magnetic properties of Mn-doped graphene (MnG) is investigated by first-principles calculations in the framework of density functional theory (DFT). Our study reveals that after H2CO, NO, NO2 and SO2 adsorption, MnG transforms from half-metal to semiconductor, and this transformation indicates that MnG’s conductivity is changed significantly. Meanwhile, O2 adsorption has no influence on MnG’s original electronic property. Therefore, the substrate of MnG is highly sensitive to H2CO, NO, NO2 and SO2. The reconfiguration of electron distribution caused by gas adsorption dramatically alters the spin polarization distribution of the combined system, that is, NO2 and H2CO adsorption leads to local spin polarization, whereas O2, NO and SO2 adsorption result in complete spin polarization. In addition, the external electric field (E-field) is varied from −0.50 V/Å to +0.50 V/Å then applied to the adsorption system. A strong interaction is observed between gas and MnG with a positive E-field as reflected in the enhancement of adsorption energy. The interaction is obviously weakened by introducing the E-field in the negative direction. Hence, the adsorption strength and sensitivity of gas on MnG can be effectively tuned by the E-field. The results can serve as useful references for the design of graphene-based gas sensor.


Nano Letters ◽  
2014 ◽  
Vol 14 (4) ◽  
pp. 1823-1829 ◽  
Author(s):  
Li-Te Chang ◽  
Chiu-Yen Wang ◽  
Jianshi Tang ◽  
Tianxiao Nie ◽  
Wanjun Jiang ◽  
...  

2016 ◽  
Vol 42 (12) ◽  
pp. 13339-13342 ◽  
Author(s):  
Xiaobo Zhao ◽  
Ruihong Liang ◽  
Zhiyong Zhou ◽  
Wenbin Zhang ◽  
Bingbing Yang ◽  
...  

2015 ◽  
Vol 107 (26) ◽  
pp. 262903 ◽  
Author(s):  
Yoshitaka Ehara ◽  
Nikola Novak ◽  
Shintaro Yasui ◽  
Mitsuru Itoh ◽  
Kyle G. Webber

2014 ◽  
Vol 104 (14) ◽  
pp. 142902 ◽  
Author(s):  
Chao Chen ◽  
Haiwu Zhang ◽  
Hao Deng ◽  
Ting Huang ◽  
Xiaobing Li ◽  
...  

2015 ◽  
Vol 08 (05) ◽  
pp. 1550057 ◽  
Author(s):  
Zeng-Wei Peng ◽  
Bao-Ting Liu

Epitaxial BiFe 0.95 Mn 0.05 O 3 (BFMO) film was deposited on (001)-oriented SrRuO 3 (SRO) coated SrTiO 3 (STO) substrate by radio-frequency (rf) magnetron sputtering. Indium tin oxide (ITO) was grown on BFMO/STO heterojunction to fabricate ITO/BFMO/SRO capacitor for investigating the ferroelectric and photovoltaic properties. The ITO/BFMO/SRO capacitor exhibits large remanent polarizations of 92.2 μC/cm2, 101 μC/cm2 and 109 μC/cm2 measured at 20 V, 25 V and 30 V, respectively. An observed abnormal capacitance–voltage (C–V) curve can be explained based on the ITO/BFMO interface. The calculated capacitance and junction width of ITO/BFMO interface are 105 pF and 32 nm, respectively. Additionally, it is found that photovoltaic effect of the ITO/BFMO/SRO capacitor is mainly attributed to ferroelectric polarization and internal electric field induced by defects. The photocurrent densities coming from ferroelectric polarization and internal field are 36 μA/cm2 and 23 μA/cm2, respectively. The photovoltaic output from the ferroelectric polarization is obviously larger than that from the internal electric field.


Nano Letters ◽  
2012 ◽  
Vol 12 (6) ◽  
pp. 2993-2999 ◽  
Author(s):  
Dehui Li ◽  
Jun Zhang ◽  
Qing Zhang ◽  
Qihua Xiong

2013 ◽  
Vol 581 ◽  
pp. 849-855 ◽  
Author(s):  
G. Murali ◽  
D. Amaranatha Reddy ◽  
G. Giribabu ◽  
R.P. Vijayalakshmi ◽  
R. Venugopal

2016 ◽  
Vol 120 (17) ◽  
pp. 174103 ◽  
Author(s):  
Yoshitaka Ehara ◽  
Nikola Novak ◽  
Azatuhi Ayrikyan ◽  
Philipp T. Geiger ◽  
Kyle G. Webber

2020 ◽  
Vol 46 (17) ◽  
pp. 27783-27788
Author(s):  
Chenxi Wang ◽  
Zujian Wang ◽  
Xiaoming Yang ◽  
Xifa Long ◽  
Chao He

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