Electronic structure and thermoelectric transport properties of AgTlTe: First-principles calculations

2008 ◽  
Vol 77 (16) ◽  
Author(s):  
M. W. Oh ◽  
D. M. Wee ◽  
S. D. Park ◽  
B. S. Kim ◽  
H. W. Lee
2020 ◽  
Vol 22 (4) ◽  
pp. 1911-1922
Author(s):  
Kunpeng Yuan ◽  
Zhehao Sun ◽  
Xiaoliang Zhang ◽  
Xiaojing Gong ◽  
Dawei Tang

This work offers insights into the thermoelectric transport properties in rhombohedral GeSe by first-principles calculations and demonstrates that both p-type and n-type GeSe are potential high-performance thermoelectric materials.


2019 ◽  
Vol 125 (8) ◽  
pp. 082531 ◽  
Author(s):  
Evan Witkoske ◽  
David Guzman ◽  
Yining Feng ◽  
Alejandro Strachan ◽  
Mark Lundstrom ◽  
...  

2018 ◽  
Vol 6 (44) ◽  
pp. 12016-12022 ◽  
Author(s):  
Dongyang Wang ◽  
Wenke He ◽  
Cheng Chang ◽  
Guangtao Wang ◽  
Jinfeng Wang ◽  
...  

Rock-salt SnSe is a new promising thermoelectric material.


2009 ◽  
Vol 1166 ◽  
Author(s):  
Dmitri Volja ◽  
Marco Fornari ◽  
Boris Kozinsky ◽  
Nicola Marzari

AbstractElectronic properties of ternary skutterudites AX3/2Y3/2 (A=Co, X=Ge, Sn and Y=S, Te) are investigated using first principles calculations to clarify recent experimental results. Band derivatives are computed accurately within an approach based on Maximally Localized Wannier Functions (MLWFs). Band structures exhibit larger effective masses compared to parental binary CoSb3. Our results also indicate a more parabolic dispersion near the top of the valence band and a multivalley character in both conduction and valence band. Despite the improved thermopower these skutterudites has relatively low power factor due to increased resistivity. The fundamental cause of such large resistivity seems to be associated with the ionicity of the bonding.


2000 ◽  
Vol 626 ◽  
Author(s):  
S. Cho ◽  
Y. Kim ◽  
A. DiVenere ◽  
G. K. L. Wong ◽  
A. J. Freeman ◽  
...  

ABSTRACTWe report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-ZT materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.


RSC Advances ◽  
2019 ◽  
Vol 9 (22) ◽  
pp. 12394-12403 ◽  
Author(s):  
Peng Yan ◽  
Guo-ying Gao ◽  
Guang-qian Ding ◽  
Dan Qin

Motivated by experimental synthesis of two-dimensional MSe2 (M = Zr, Hf) thin films, we investigate the thermoelectric transport properties of MSe2 (M = Zr, Hf) bilayers by using first-principles calculations and Boltzmann transport theory.


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