scholarly journals Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers

2016 ◽  
Vol 93 (20) ◽  
Author(s):  
Yiling Yu ◽  
Yifei Yu ◽  
Chao Xu ◽  
Andy Barrette ◽  
Kenan Gundogdu ◽  
...  
ACS Photonics ◽  
2017 ◽  
Vol 4 (7) ◽  
pp. 1713-1721 ◽  
Author(s):  
Mohammad H. Tahersima ◽  
M. Danang Birowosuto ◽  
Zhizhen Ma ◽  
William C. Coley ◽  
Michael D. Valentin ◽  
...  

Author(s):  
Lujun Huang ◽  
Alex Krasnok ◽  
Andrea Alu ◽  
Yiling Yu ◽  
Dragomir Neshev ◽  
...  

Abstract Two dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different types of van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.


2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  

2021 ◽  
Vol 103 (17) ◽  
Author(s):  
Yihao Wang ◽  
Changzheng Xie ◽  
Junbo Li ◽  
Zan Du ◽  
Liang Cao ◽  
...  

2020 ◽  
Vol 102 (23) ◽  
Author(s):  
Tianle Wang ◽  
Nick Bultinck ◽  
Michael P. Zaletel

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Daniil Marinov ◽  
Jean-François de Marneffe ◽  
Quentin Smets ◽  
Goutham Arutchelvan ◽  
Kristof M. Bal ◽  
...  

AbstractThe cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.


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