Electron beam–specimen interactions and their effect on high-angle annular dark-field imaging of dopant atoms within a crystal

2010 ◽  
Vol 66 (3) ◽  
pp. 407-420 ◽  
Author(s):  
B. G. Mendis
Keyword(s):  
Electron Beam ◽  
Dark Field ◽  
Beam Specimen ◽  
High Angle ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Dopant Atoms ◽  
Field Imaging

3d Reconstruction of Sub-Nm Beam Profiles in STEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 344-345
Author(s):  
G. Möbus ◽  
R.E. Dunin-Borkowski ◽  
C.J.D. Hethėrington ◽  
J.L. Hutchison
Keyword(s):  
Electron Beam ◽  
Chemical Analysis ◽  
Energy Loss ◽  
Intensity Distribution ◽  
Dark Field ◽  
Beam Forming ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

Introduction:Atomically resolved chemical analysis using techniques such as electron energy loss spectroscopy and annular dark field imaging relies on the ability to form a well-characterised sub-nm electron beam in a FEGTEM/STEM [1-2]. to understand EELS+EDX-signal formation upon propagation of a sub-nm beam through materials we first have to assess precisely the beam intensity distribution in vacuum and find conditions for the best obtainable resolution.Experimental Details:Modern TEM/STEM instruments combine features of both imaging and scanning technology. The beam forming capability approaches closely that for dedicated STEMs, while CCD recording devices allow us to measure the beam profile by direct imaging at magnifications up to 1.5 M. The recording of a “z-section” series through the 3D intensity distribution of the cross-over can therefore be realised by recording of a “condenser focal series”.

Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging

2016 ◽  
Vol 169 ◽  
pp. 1-10 ◽  
Author(s):  
Andreas Beyer ◽  
Jürgen Belz ◽  
Nikolai Knaub ◽  
Kakhaber Jandieri ◽  
Kerstin Volz
Keyword(s):  
Dark Field ◽  
Atomic Resolution ◽  
High Angle ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Field Imaging

Atomic-Scale Investigation of Two-Component MoVO Complex Oxide Catalysts Using Aberration-Corrected High-Angle Annular Dark-Field Imaging

2010 ◽  
Vol 22 (6) ◽  
pp. 2033-2040 ◽  
Author(s):  
William D. Pyrz ◽  
Douglas A. Blom ◽  
Masahiro Sadakane ◽  
Katsunori Kodato ◽  
Wataru Ueda ◽  
...  
Keyword(s):  
Complex Oxide ◽  
Dark Field ◽  
Oxide Catalysts ◽  
Atomic Scale ◽  
High Angle ◽  
Dark Field Imaging ◽  
Two Component ◽  
Annular Dark Field ◽  
Field Imaging ◽  
Aberration Corrected

Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers

1999 ◽  
Vol 589 ◽  
Author(s):  
R. Vanfleet ◽  
D.A. Muller ◽  
H.J. Gossmann ◽  
P.H. Citrin ◽  
J. Silcox
Keyword(s):  
Dark Field ◽  
Atomic Scale ◽  
Dopant Atom ◽  
Specimen Preparation ◽  
Dark Field Imaging ◽  
Dramatic Difference ◽  
Annular Dark Field ◽  
Dopant Atoms ◽  
Electron Energy Loss ◽  
Field Imaging

AbstractWe report measurements of the distribution of Sb atoms in σ-doped Si, over a wide 2-D concentration range. Both annular dark-field imaging and electron energy loss spectroscopy proved sufficiently sensitive to locate Sb atoms at the atomic scale. Improvements in both detector sensitivities and specimen preparation were necessary to achieve these results, which offer a surprising explanation for the dramatic difference in electrical activity between 2-D and 3-D dopant distributions at the same effective volume concentrations. The prospects for the general identification of individual dopant atoms will be discussed.

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