Polarization-independent absorption enhancement in a graphene square array with a cascaded grating structure

2018 ◽  
Vol 25 (2) ◽  
pp. 419-424 ◽  
Author(s):  
Jun Wu
Keyword(s):  
Near Infrared ◽  
Photonic Band Gap ◽  
Absorption Enhancement ◽  
Infrared Range ◽  
Two Dimensional ◽  
Enhanced Absorption ◽  
Guided Mode ◽  
Square Array ◽  
Multilayer Grating ◽  
Polarization Independent

The polarization-independent enhanced absorption effect of graphene in the near-infrared range is investigated. This is achieved by placing a graphene square array on top of a dielectric square array backed by a two-dimensional multilayer grating. Total optical absorption in graphene can be attributed to critical coupling, which is achieved through the combined effect of guided-mode resonance with the dielectric square array and the photonic band gap with the two-dimensional multilayer grating. To reveal the physical origin of such a phenomenon, the electromagnetic field distributions for both polarizations are illustrated. The designed graphene absorber exhibits near-unity polarization-independent absorption at resonance with an ultra-narrow spectrum. Moreover, the polarization-independent absorption can be tuned simply by changing the geometric parameters. The results may have promising potential for the design of graphene-based optoelectronic devices.

scholarly journals Measurement of spontaneous emission from a two-dimensional photonic band gap defined microcavity at near-infrared wavelengths

1999 ◽  
Vol 74 (11) ◽  
pp. 1522-1524 ◽  
Author(s):  
R. K. Lee ◽  
O. J. Painter ◽  
B. D’Urso ◽  
A. Scherer ◽  
A. Yariv
Keyword(s):  
Band Gap ◽  
Spontaneous Emission ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Two Dimensional ◽  
Infrared Wavelengths ◽  
Photonic Band

Near-infrared two-dimensional photonic band-gap materials

1996 ◽  
Vol 21 (11) ◽  
pp. 830 ◽  
Author(s):  
A. Rosenberg ◽  
R. J. Tonucci ◽  
H.-B. Lin ◽  
A. J. Campillo
Keyword(s):  
Band Gap ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Two Dimensional ◽  
Photonic Band Gap Materials ◽  
Photonic Band

Wavelength-Selective Solar Thermal Absorber With Two-Dimensional Nickel Gratings

2014 ◽  
Vol 136 (7) ◽  
Author(s):  
Bong Jae Lee ◽  
Yu-Bin Chen ◽  
Sunwoo Han ◽  
Feng-Cheng Chiu ◽  
Hyun Jin Lee
Keyword(s):  
Solar Radiation ◽  
Near Infrared ◽  
Broad Band ◽  
Sio2 Film ◽  
Solar Thermal ◽  
Local Magnetic Field ◽  
Absorption Enhancement ◽  
Two Dimensional ◽  
Nickel Substrate ◽  
Infrared Spectral

The direct utilization of solar radiation has been considered a promising energy source because of its abundance, sustainability, and cleanness. The conversion of solar radiation into usable heat largely depends on the absorption characteristics of a solar thermal collector. In the present study, we conducted design analysis of a wavelength-selective absorber composed of a two-dimensional Nickel grating, a thin SiO2 film, and a Nickel substrate. Dimensions of the two-dimensional grating were determined with the Taguchi method, which optimized the spectral absorptance for both polarizations. The spectral absorptance demonstrated a broad-band plateau within the visible and the near-infrared spectral region, but it was significantly suppressed at longer wavelengths. Moreover, the absorptance plateau was nearly insensitive to the incident orientation of solar radiation. Physical mechanisms of the absorption enhancement were elucidated with the local magnetic field distribution.

Near-infrared photonic band gap of two-dimensional triangular air-rod lattices as revealed by transmittance measurement

1996 ◽  
Vol 53 (3) ◽  
pp. 1010-1013 ◽  
Author(s):  
K. Inoue ◽  
M. Wada ◽  
K. Sakoda ◽  
M. Hayashi ◽  
T. Fukushima ◽  
...  
Keyword(s):  
Band Gap ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Two Dimensional ◽  
Photonic Band

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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